Datasheet > STB6NC90ZT4

STB6NC90ZT4

更新时间： 2024-09-29 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
13页	200K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 900V V(BR)DSS \| 5.4A I(D) \| TO-252AA

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中文翻译

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数据手册

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STB6NC90ZT4 数据手册

STP6NC90Z - STP6NC90ZFP

STB6NC90Z - STB6NC90Z-1

N-CHANNEL 900V - 1.55

Ω - 5.4A TO-220/FP/D PAK/I PAK

Zener-Protected PowerMESH III MOSFET

TYPE

DS(on)

DSS

STP6NC90Z

STP6NC90ZFP

STB6NC90Z

STB6NC90Z-1

900 V

< 1.9 Ω

5.4 A

D PAK

■

TYPICAL R (on) = 1.55Ω

EXTREMELY HIGH dv/dt AND CAPABILITY GATE

TO - SOURCE ZENER DIODES

TO-220

TO-220FP

■

100% AVALANCHE TESTED

VERY LOW GATE INPUT RESISTANCE

I PAK

(Tabless TO-220)

DESCRIPTION

The third generation of MESH OVERLAY

Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

■

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

WELDING EQUIPMENT

■

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP(B)6NC90Z(-1) STP6NC90ZFP

Drain-source Voltage (V

= 0)

900

± 25

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

5.4

3.43

5.4(*)

3.43(*)

Drain Current (continuos) at T = 100°C

(1)

Drain Current (pulsed)

Total Dissipation at T = 25°C

135

1.08

TOT

Derating Factor

0.32

W/°C

V/ns

Gate-source Current

±50

Gate source ESD(HBM-C=100pF, R=15KΩ)

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

ESD(G-S)

dv/dt

2000

ISO

–65 to 150

150

°C

stg

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1)I ≤5.4A, di/dt ≤100A/µs, V ≤ V

, T ≤ T

j JMAX

(BR)DSS

July 2002

(2) Limited only by maximum temperature allowed

1/13

12 3 4 5 6 7...13

中文翻译

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