Datasheet > STB6N60M2

STB6N60M2

更新时间： 2023-12-20 18:44:50

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
21页	1080K
描述
N沟道600 V、1.06 Ohm典型值、4.5 A MDmesh M2功率MOSFET，D2PAK封装

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数据手册

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STB6N60M2 数据手册

STB6N60M2,

STD6N60M2

N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2

Power MOSFETs in D²PAK and DPAK packages

Datasheet

production data

Features

V_DS

T_Jmax

R_DS(on)

max

Order code

I_D

STB6N60M2

STD6N60M2

TAB

650 V

1.2 Ω

4.5 A

• Extremely low gate charge

D²PAK

DPAK

• Excellent output capacitance (C_oss) profile

• 100% avalanche tested

• Zener-protected

Applications

Figure 1. Internal schematic diagram

• Switching applications

, TAB

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, the devices exhibit low on-resistance

and optimized switching characteristics, rendering

them suitable for the most demanding high

efficiency converters.

AM15572v1

Table 1. Device summary

Order code

Marking

Package

Packing

STB6N60M2

STD6N60M2

D²PAK

DPAK

6N60M2

Tape and reel

May 2016

DocID024772 Rev 3

1/21

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...21

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