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SST25VF080B-80-4C-QAE PDF预览

SST25VF080B-80-4C-QAE

更新时间： 2024-09-18 11:51:51
品牌 Logo 应用领域
SST 闪存
页数 文件大小 规格书
32页 752K
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8 Mbit SPI Serial Flash

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SST25VF080B-80-4C-QAE 数据手册

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8 Mbit SPI Serial Flash  
SST25VF080B  
SST25VF080B8Mb Serial Peripheral Interface (SPI) flash memory  
Data Sheet  
FEATURES:  
•
•
•
Single Voltage Read and Write Operations  
– 2.7-3.6V  
•
•
•
•
•
•
•
Auto Address Increment (AAI) Programming  
– Decrease total chip programming time over  
Byte-Program operations  
Serial Interface Architecture  
– SPI Compatible: Mode 0 and Mode 3  
High Speed Clock Frequency  
– 50/66 MHz conditional (see Table 13)  
- (SST25VF080B-50-xx-xxxx)  
– 80 MHz  
End-of-Write Detection  
– Software polling the BUSY bit in Status Register  
– Busy Status readout on SO pin in AAI Mode  
Hold Pin (HOLD#)  
– Suspends a serial sequence to the memory  
without deselecting the device  
- (SST25VF080B-80-xx-xxxx)  
•
•
•
Superior Reliability  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
Write Protection (WP#)  
– Enables/Disables the Lock-Down function of the  
status register  
Low Power Consumption:  
– Active Read Current: 10 mA (typical)  
– Standby Current: 5 µA (typical)  
Software Write Protection  
– Write protection through Block-Protection bits in  
status register  
Flexible Erase Capability  
– Uniform 4 KByte sectors  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks  
Fast Erase and Byte-Program:  
Temperature Range  
– Commercial: 0°C to +70°C  
– Industrial: -40°C to +85°C  
Packages Available  
– 8-lead SOIC (200 mils)  
•
– Chip-Erase Time: 35 ms (typical)  
– Sector-/Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 7 µs (typical)  
– 8-contact WSON (6mm x 5mm)  
– 8-lead PDIP (300 mils)  
All devices are RoHS compliant  
•
PRODUCT DESCRIPTION  
SST’s 25 series Serial Flash family features a four-wire,  
SPI-compatible interface that allows for a low pin-count  
package which occupies less board space and ultimately  
lowers total system costs. The SST25VF080B devices are  
enhanced with improved operating frequency and lower  
power consumption. SST25VF080B SPI serial flash mem-  
ories are manufactured with SST’s proprietary, high-perfor-  
mance CMOS SuperFlash technology. The split-gate cell  
design and thick-oxide tunneling injector attain better reli-  
ability and manufacturability compared with alternate  
approaches.  
The SST25VF080B devices significantly improve perfor-  
mance and reliability, while lowering power consumption.  
The devices write (Program or Erase) with a single power  
supply of 2.7-3.6V for SST25VF080B. The total energy  
consumed is a function of the applied voltage, current, and  
time of application. Since for any given voltage range, the  
SuperFlash technology uses less current to program and  
has a shorter erase time, the total energy consumed during  
any Erase or Program operation is less than alternative  
flash memory technologies.  
The SST25VF080B device is offered in 8-lead SOIC (200  
mils), 8-contact WSON (6mm x 5mm), and 8-lead PDIP  
(300 mils) packages. See Figure 2 for pin assignments.  
©2010 Silicon Storage Technology, Inc.  
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.  
These specifications are subject to change without notice.  
S71296-04-000  
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