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SST25VF080B-80-4C-S2AE-T PDF预览

SST25VF080B-80-4C-S2AE-T

更新时间: 2024-11-10 14:44:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
37页 376K
描述
IC,SERIAL EEPROM,NOR FLASH,1MX8,CMOS,SOP,8PIN,PLASTIC

SST25VF080B-80-4C-S2AE-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SOP, SOP8,.3
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.83
最大时钟频率 (fCLK):80 MHz数据保留时间-最小值:100
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G8
JESD-609代码:e3内存密度:8388608 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:1端子数量:8
字数:1048576 words字数代码:1000000
最高工作温度:70 °C最低工作温度:
组织:1MX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.3
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/3.3 V认证状态:Not Qualified
串行总线类型:SPI最大待机电流:0.00002 A
子类别:Flash Memories最大压摆率:0.03 mA
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
类型:NOR TYPE写保护:HARDWARE/SOFTWARE
Base Number Matches:1

SST25VF080B-80-4C-S2AE-T 数据手册

 浏览型号SST25VF080B-80-4C-S2AE-T的Datasheet PDF文件第2页浏览型号SST25VF080B-80-4C-S2AE-T的Datasheet PDF文件第3页浏览型号SST25VF080B-80-4C-S2AE-T的Datasheet PDF文件第4页浏览型号SST25VF080B-80-4C-S2AE-T的Datasheet PDF文件第5页浏览型号SST25VF080B-80-4C-S2AE-T的Datasheet PDF文件第6页浏览型号SST25VF080B-80-4C-S2AE-T的Datasheet PDF文件第7页 
8 Mbit SPI Serial Flash  
SST25VF080B  
A Microchip Technology Company  
Data Sheet  
SST's 25 series Serial Flash family features a four-wire, SPI-compatible interface  
that allows for a low pin-count package which occupies less board space and ulti-  
mately lowers total system costs. The SST25VF080B devices are enhanced with  
improved operating frequency and lower power consumption. SST25VF080B SPI  
serial flash memories are manufactured with SST's proprietary, high-performance  
CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunnel-  
ing injector attain better reliability and manufacturability compared with alternate  
approaches.  
Features  
• Single Voltage Read and Write Operations  
• Auto Address Increment (AAI) Programming  
– 2.7-3.6V  
– Decrease total chip programming time over Byte-Pro-  
gram operations  
• Serial Interface Architecture  
• End-of-Write Detection  
– SPI Compatible: Mode 0 and Mode 3  
– Software polling the BUSY bit in Status Register  
– Busy Status readout on SO pin in AAI Mode  
• High Speed Clock Frequency  
– 50/66 MHz conditional (see Table 14)  
- (SST25VF080B-50-xx-xxxx)  
– 80 MHz  
• Hold Pin (HOLD#)  
– Suspends a serial sequence to the memory  
without deselecting the device  
- (SST25VF080B-80-xx-xxxx)  
• Superior Reliability  
• Write Protection (WP#)  
– Endurance: 100,000 Cycles (typical)  
– Greater than 100 years Data Retention  
– Enables/Disables the Lock-Down function of the status  
register  
• Low Power Consumption:  
• Software Write Protection  
– Active Read Current: 10 mA (typical)  
– Standby Current: 5 µA (typical)  
– Write protection through Block-Protection bits in status  
register  
• Flexible Erase Capability  
• Temperature Range  
– Uniform 4 KByte sectors  
– Commercial: 0°C to +70°C  
– Uniform 32 KByte overlay blocks  
– Uniform 64 KByte overlay blocks  
– Industrial: -40°C to +85°C  
• Packages Available  
• Fast Erase and Byte-Program:  
– 8-lead SOIC (200 mils)  
– 8-lead SOIC (150 mils)  
– 8-contact WSON (6mm x 5mm)  
– 8-lead PDIP (300 mils)  
– Chip-Erase Time: 35 ms (typical)  
– Sector-/Block-Erase Time: 18 ms (typical)  
– Byte-Program Time: 7 µs (typical)  
• All devices are RoHS compliant  
www.microchip.com  
©2011 Silicon Storage Technology, Inc.  
DS25045A  
09/11  

SST25VF080B-80-4C-S2AE-T 替代型号

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