Datasheet > SSP1N50B

SSP1N50B

更新时间： 2024-09-12 22:21:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	630K
描述
520V N-Channel MOSFET

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SSP1N50B 数据手册

SSP1N50B

520V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supplies,

power factor correction and electronic lamp ballasts based

on half bridge.

•

1.5A, 520V, R

= 5.3Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 8.3 nC)

Low Crss ( typical 5.5 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

●

◀

▲

●

TO-220

SSP Series

D S

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

SSP1N50B

520

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

1.5

- Continuous (T = 100°C)

0.97

5.0

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

100

1.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

3.6

V/ns

dv/dt

3.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.29

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

3.44

Units

°C/W

0.5

θJC

θCS

θJA

62.5

Rev. B, May 2002

12 3 4 5 6 7 8

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