5秒后页面跳转
SSP1N60 PDF预览

SSP1N60

更新时间: 2024-10-31 22:21:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 853K
描述
600V N-Channel MOSFET

SSP1N60 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.3Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):1 A最大漏源导通电阻:12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):3 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SSP1N60 数据手册

 浏览型号SSP1N60的Datasheet PDF文件第2页浏览型号SSP1N60的Datasheet PDF文件第3页浏览型号SSP1N60的Datasheet PDF文件第4页浏览型号SSP1N60的Datasheet PDF文件第5页浏览型号SSP1N60的Datasheet PDF文件第6页浏览型号SSP1N60的Datasheet PDF文件第7页 
November 2001  
SSP1N60B/SSS1N60B  
600V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supplies.  
1.0A, 600V, R  
= 12@V = 10 V  
DS(on) GS  
Low gate charge ( typical 5.9 nC)  
Low Crss ( typical 3.6 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
G
TO-220  
SSP Series  
TO-220F  
SSS Series  
G
D S  
G D  
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
SSP1N60B  
SSS1N60B  
Units  
V
V
I
Drain-Source Voltage  
600  
DSS  
- Continuous (T = 25°C)  
Drain Current  
1.0  
0.6  
3.0  
1.0 *  
0.6 *  
3.0 *  
A
D
C
- Continuous (T = 100°C)  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
50  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
1.0  
3.4  
5.5  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
W
AR  
dv/dt  
P
Power Dissipation (T = 25°C)  
34  
17  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.27  
0.13  
W/°C  
°C  
T , T  
-55 to +150  
300  
J
STG  
Maximum lead temperature for soldering purposes,  
T
°C  
L
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
Parameter  
SSP1N60B  
SSS1N60B  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case Max.  
Thermal Resistance, Case-to-Sink Typ.  
3.67  
0.5  
7.48  
--  
θJC  
θCS  
Thermal Resistance, Junction-to-Ambient Max.  
62.5  
62.5  
θJA  
©2001 Fairchild Semiconductor Corporation  
Rev. A, November 2001  

与SSP1N60相关器件

型号 品牌 获取价格 描述 数据表
SSP1N60A FAIRCHILD

获取价格

Advanced Power MOSFET
SSP1N60AJ69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 1A I(D), 600V, 12ohm, 1-Element, N-Channel, Silicon, Metal-
SSP1N60B FAIRCHILD

获取价格

600V N-Channel MOSFET
SSP-1R-1000B CRANE

获取价格

950MHz - 1050MHz RF/MICROWAVE SSB MODULATOR, 9dB CONVERSION LOSS-MAX, MERI-PAC R, 8 PIN
SSP-1R-1000B MERRIMAC

获取价格

SINGLE SIDEBAND MODULATORS
SSP-1R-10B MERRIMAC

获取价格

SINGLE SIDEBAND MODULATORS
SSP-1R-10B CRANE

获取价格

Modulator, SSB, 9.5MHz Min, 10.5MHz Max, 9dB Conversion Loss-Max, MERI-PAC R, 8 PIN
SSP-1R-XXXB CRANE

获取价格

RF/MICROWAVE SSB MODULATOR, 9dB CONVERSION LOSS-MAX, MERI-PAC R, 8 PIN
SSP1TKG CIT

获取价格

CIT SWITCH
SSP1TKQ CIT

获取价格

CIT SWITCH