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SSP1N50BJ69Z PDF预览

SSP1N50BJ69Z

更新时间: 2024-10-31 15:52:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 845K
描述
Power Field-Effect Transistor, 1.5A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

SSP1N50BJ69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.68
雪崩能效等级(Eas):100 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (ID):1.5 A
最大漏源导通电阻:5.3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):5 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SSP1N50BJ69Z 数据手册

 浏览型号SSP1N50BJ69Z的Datasheet PDF文件第2页浏览型号SSP1N50BJ69Z的Datasheet PDF文件第3页浏览型号SSP1N50BJ69Z的Datasheet PDF文件第4页浏览型号SSP1N50BJ69Z的Datasheet PDF文件第5页浏览型号SSP1N50BJ69Z的Datasheet PDF文件第6页浏览型号SSP1N50BJ69Z的Datasheet PDF文件第7页 
November 2001  
SSP1N50B/SSS1N50B  
500V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supplies,  
power factor correction and electronic lamp ballasts based  
on half bridge.  
1.5A, 500V, R  
= 5.3@V = 10 V  
DS(on) GS  
Low gate charge ( typical 8.3 nC)  
Low Crss ( typical 5.5 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
G
TO-220  
SSP Series  
TO-220F  
SSS Series  
G
D S  
G D  
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
SSP1N50B  
SSS1N50B  
Units  
V
V
I
Drain-Source Voltage  
500  
DSS  
- Continuous (T = 25°C)  
Drain Current  
1.5  
0.97  
5.0  
1.5 *  
0.97 *  
5.0 *  
A
D
C
- Continuous (T = 100°C)  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
100  
1.5  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
3.6  
mJ  
V/ns  
W
AR  
dv/dt  
5.5  
P
Power Dissipation (T = 25°C)  
36  
23  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.29  
0.19  
W/°C  
°C  
T , T  
-55 to +150  
300  
J
STG  
Maximum lead temperature for soldering purposes,  
T
°C  
L
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
SSP1N50B  
SSS1N50B  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case Max.  
Thermal Resistance, Case-to-Sink Typ.  
3.44  
0.5  
5.37  
--  
θJC  
θCS  
Thermal Resistance, Junction-to-Ambient Max.  
62.5  
62.5  
θJA  
©2001 Fairchild Semiconductor Corporation  
Rev. A, November 2001  

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