是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.64 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 0.2 A |
最大漏源导通电阻: | 2.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F6 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SSM6N7002BFU | TOSHIBA |
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High-Speed Switching Applications Analog Switch Applications | |
SSM6N7002BFU(TE85L) | TOSHIBA |
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TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,60V V(BR)DSS,200MA I(D),SOT-363 | |
SSM6N7002BFU,LF(D | TOSHIBA |
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Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 2-Element, N-Channel, Silicon, Metal | |
SSM6N7002CFU | TOSHIBA |
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Small Signal MOS FET (Dual) | |
SSM6N7002CFU,LF(T | TOSHIBA |
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SMALL SIGNAL, FET | |
SSM6N7002FU | TOSHIBA |
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High Speed Switching Applications Analog Switch Applications | |
SSM6N7002FU_07 | TOSHIBA |
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High Speed Switching Applications | |
SSM6N7002FUTE85LF | TOSHIBA |
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High Speed Switching Applications Analog Switch Applications | |
SSM6N7002KFU | TOSHIBA |
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Small Signal MOS FET (Dual) | |
SSM6N7002KFU,LF | TOSHIBA |
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MOSFET 2N-CH 60V 0.3A |