SSM6N7002FU

更新时间： 2024-01-23 01:09:00

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体开关小信号场效应晶体管光电二极管
页数	文件大小	规格书
5页	158K
描述
High Speed Switching Applications Analog Switch Applications

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中文翻译

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技术参数
数据手册

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SSM6N7002FU 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.65
Base Number Matches：	1

SSM6N7002FU 数据手册

SSM6N7002FU

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N7002FU

High Speed Switching Applications

Analog Switch Applications

Unit: mm

•

Small package

Low ON resistance : R = 3.3 Ω (max) (@V

= 4.5 V)

= 5 V)

: R = 3.2 Ω (max) (@V

: R = 3.0 Ω (max) (@V

= 10 V)

Maximum Ratings (Ta = 25°C)

(Q1, Q2 Common)

Characteristics

Symbol

Rating

Unit

Drain-Source voltage

Gate-Source voltage

± 20

200

GSS

Drain current

1.SOURCE1 4.SOURCE2

Pulse

800

2.GATE1

3.DRAIN2

5.GATE2

6.DRAIN1

Drain power dissipation (Ta = 25°C)

Channel temperature

(Note)

300

°C

150

JEDEC

―

Storage temperature range

−55~150

°C

stg

JEITA

Note: Total rating, mounted on FR4 board

(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32mm × 6)

TOSHIBA

2-2J1C

0.4 mm

Marking

Equivalent Circuit

(top view)

Handling Precaution

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is

protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects

that come into direct contact with devices should be made of anti-static materials.

2004-05-07

12 3 4 5

中文翻译

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