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SSM3K318T(TE85L,F) PDF预览

SSM3K318T(TE85L,F)

更新时间： 2024-10-31 21:15:51
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
6页 212K
描述
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2.5A I(D),SOT-346VAR

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SSM3K318T(TE85L,F) 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.84配置：Single
最大漏极电流 (Abs) (ID)：2.5 AFET 技术：METAL-OXIDE SEMICONDUCTOR
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：0.7 W
子类别：FET General Purpose Power表面贴装：YES
Base Number Matches：1

SSM3K318T(TE85L,F) 数据手册

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SSM3K318T  
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)  
SSM3K318T  
○Load Switching Applications  
○High-Speed Switching Applications  
Unit: mm  
+0.2  
2.8-0.3  
•
•
4.5 V drive  
Low ON-resistance :R  
:R  
= 145 mΩ (max) (@V  
= 107 mΩ (max) (@V  
= 4.5 V)  
= 10 V)  
DS(ON)  
GS  
+0.2  
1.6-0.1  
DS(ON)  
GS  
１
２
Absolute Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
60  
Unit  
V
３
Drain-Source voltage  
V
V
DSS  
Gate-Source voltage  
Drain current  
±20  
V
GSS  
DC  
I
2.5  
D
A
Pulse  
I
5.0  
DP  
Drain power dissipation  
Channel temperature  
P
(Note 1)  
700  
mW  
°C  
D
T
ch  
150  
Storage temperature range  
T
stg  
−55 to 150  
°C  
1: Gate  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
2: Source  
3: Drain  
TSM  
JEDEC  
JEITA  
―
―
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
2-3S1A  
Weight: 10 mg (typ.)  
Note1: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu  
Pad: 645 mm2)  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ.  
Max  
Unit  
V
V
V
I
I
= 10mA, V  
= 10mA, V  
= 0 V  
60  
35  
⎯
⎯
1.8  
3.7  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
(BR) DSS  
(BR) DSX  
D
D
GS  
GS  
Drain-Source breakdown voltage  
= -20 V  
Drain cut-off current  
I
V
V
V
V
= 60 V, V = 0 V  
GS  
⎯
1
μA  
μA  
V
DSS  
GSS  
DS  
GS  
DS  
DS  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
I
= ±16 V, V = 0 V  
⎯
±1  
2.8  
⎯
DS  
V
= 5 V, I = 1 mA  
⎯
th  
D
⏐Y ⏐  
= 5 V, I = 2.0 A  
(Note 2)  
(Note 2)  
(Note 2)  
7.4  
83.5  
101  
235  
30.5  
23.0  
7.0  
4.8  
2.2  
14.0  
9.5  
-0.83  
S
fs  
D
I
I
= 2.0 A, V  
= 10 V  
= 4.5 V  
107  
145  
⎯
D
D
GS  
GS  
Drain–source ON-resistance  
R
mΩ  
DS (ON)  
= 1.0 A, V  
Input capacitance  
C
C
iss  
Output capacitance  
Reverse transfer capacitance  
Total Gate Charge  
V
= 30 V, V  
= 0 V, f = 1 MHz  
GS  
pF  
⎯
DS  
oss  
C
rss  
⎯
Qg  
⎯
V
V
= 30 V, I = 2.5 A  
DS  
DD  
GS  
Gate-Source Charge  
Gate-Drain Charge  
nC  
Qgs  
Qgd  
⎯
= 10 V  
⎯
Turn-on time  
Switching time  
t
t
V
V
= 30 V, I = 1.0 A,  
D
⎯
on  
DD  
GS  
ns  
V
= 0 to 4.5 V, R = 10 Ω  
Turn-off time  
⎯
G
off  
Drain-Source forward voltage  
Note2: Pulse test  
V
I
= -2.5 A, V = 0 V  
GS  
(Note 2)  
-1.2  
DSF  
D
1
2009-04-09  
123456

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