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SS8550BTA PDF预览

SS8550BTA

更新时间: 2024-11-22 11:12:07
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
6页 162K
描述
PNP外延硅晶体管

SS8550BTA 数据手册

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DATA SHEET  
www.onsemi.com  
PNP Epitaxial Silicon  
Transistor  
TO−92−3  
CASE 135AN  
SS8550  
1
2
3
Features  
2 W Output Amplifier of Portable Radios in Class B Push−Pull  
Operation  
Complementary to SS8050  
TO−92−3  
CASE 135AR  
Collector Current: I = 1.5 A  
C
1
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
2
3
Compliant  
1. Emitter  
2. Base  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
3. Collector  
Parameter  
Collector−Base Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol  
Value  
−40  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
MARKING DIAGRAM  
−25  
V
−6  
V
AS8  
550x  
YWW  
I
C
−1.5  
A
Junction Temperature  
Storage Temperature  
T
J
150  
°C  
°C  
T
STG  
−65 to 150  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
S8550x  
= Specific Device Code  
Line 1: A = Assembly Location  
Line 2: x = C or D  
THERMAL CHARACTERISTICS (Note 1)  
Line 3: Y = Year  
(T = 25°C unless otherwise noted)  
A
WW= Work Week  
Parameter  
Power Dissipation  
Symbol  
Value  
1
Unit  
W
P
D
D
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Power Dissipation Derate Above 25°C  
P
8
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
125  
q
JA  
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)  
with minimum land pattern size.  
© Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
August, 2021 − Rev. 3  
SS8550/D  
 

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