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SS8550D PDF预览

SS8550D

更新时间: 2024-09-23 23:15:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器便携式
页数 文件大小 规格书
4页 42K
描述
2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

SS8550D 数据手册

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SS8550  
2W Output Amplifier of Portable Radios in  
Class B Push-pull Operation.  
Complimentary to SS8050  
Collector Current: I =1.5A  
Collector Power Dissipation: P =2W (T =25°C)  
C
C
C
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-40  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-25  
V
CEO  
EBO  
-6  
V
I
-1.5  
A
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
1
W
C
T
T
150  
°C  
°C  
J
-65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
-40  
-25  
-6  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I = -100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I = -2mA, I =0  
C B  
I = -100µA, I =0  
V
E
C
I
I
V
= -35V, I =0  
-100  
-100  
nA  
nA  
CBO  
EBO  
CB  
EB  
E
Emitter Cut-off Current  
V
= -6V, I =0  
C
h
h
h
DC Current Gain  
V
V
V
= -1V, I = -5mA  
45  
85  
40  
170  
160  
80  
FE1  
FE2  
FE3  
CE  
CE  
CE  
C
= -1V, I = -100mA  
300  
C
= -1V, I = -800mA  
C
V
V
V
(sat)  
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter on Voltage  
I = -800mA, I = -80mA  
-0.28  
-0.98  
-0.66  
15  
-0.5  
-1.2  
-1.0  
V
V
CE  
BE  
BE  
C
B
I = -800mA, I = -80mA  
C
B
V
= -1V, I = -10mA  
V
CE  
C
C
Output Capacitance  
V
= -10V, I =0  
pF  
ob  
CB  
E
f=1MHz  
f
Current Gain Bandwidth Product  
V
= -10V, I = -50mA  
100  
200  
MHz  
T
CE  
C
h Classification  
FE  
Classification  
B
C
D
h
85 ~ 160  
120 ~ 200  
160 ~ 300  
FE2  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, November 2002  

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