Datasheet > SS8550D3(TO-92)

SS8550D3(TO-92)

更新时间： 2024-09-24 15:52:51

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江苏长电/长晶 - CJ		/
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描述
Transistor

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SS8550D3(TO-92) 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

SS8550D3(TO-92) 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

SS8550 TRANSISTOR (PNP)

TO-92

FEATURES

Power dissipation

P_C: 1 W (T_A=25.)

1. EMITTER

2. BASE

3. COLLECTOR

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Junction Temperature

Storage Temperature

Value

Unit

-40

-25

-5

-1.5

T_j

150

℃

T_stg

-55-150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

-40

-25

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBOI_C=-100uA, I_E=0

V_(BR)CEOI_C=-0.1mA, I_B=0

V_(BR)EBOI_E=-100μA, I_C=0

I_CBO

I_CEO

V_CB=-40V, I_E=0

-0.1

400

μA

Emitter cut-off current

V_CE=-20V, I_E=0

Emitter cut-off current

I_EBO

V_EB=-5V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE(on)

Co_b

V_CE=-1V, I_C=-100mA

V_CE=-1V, I_C=-800mA

I_C=-800mA, I_B=-80mA

V_CE=-1V, I_C=-10mA

V_CB=-10V, I_E=0mA,f=1MH_Z

V_CE=-10V, I_C=-50mA,f=-30MH_Z

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

-0.5

-1.2

-1

Out capacitance

MHz

Transition frequency

f_T

100

CLASSIFICATION OF h_FE(2)

Rank

Range

85-160

120-200

160-300

300-400

A,Apr,2011

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