Datasheet > SS8550D3

SS8550D3

更新时间： 2024-11-18 14:14:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
2页	250K
描述
Transistor

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中文翻译

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技术参数
数据手册

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SS8550D3 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Is Samacsys：	N	Base Number Matches：	1

SS8550D3 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

SOT-323 Plastic-Encapsulate Transistors

SOT-323

SS8550 TRANSISTOR (PNP)

FEATURES

Complimentary to SS8050

1. Base

2. Emitter

3. Collector

MARKING: Y2

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-40

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-25

-5

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-1.5

0.2

P_C

℃

T_j

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=-100μA, I_E=0

I_C=-0.1mA, I_B=0

I_E=-100μA, I_C=0

V_CB=-40V, I_E=0

-40

-25

-5

-0.1

400

μA

Collector cut-off current

I_CEO

V_CE=-20V, I_B=0

Emitter cut-off current

I_EBO

V_EB=-5V, I_C=0

h_FE(1)

V_CE=-1V, I_C=-100mA

V_CE=-1V, I_C=-800mA

I_C=-800mA, I_B=-80mA

I_C=-1V,V_CE=-10mA

I_B=-1A

120

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter on voltage

V_CE(sat)

V_BE(sat)

V_BE(on)

V_BEF

-0.5

-1.2

-1

Base-emitter positive favor voltage

-1.55

_CE=-10V,I_C=-50mA,

Transition frequency

f_T

100

MHz

f=30MHz

output capacitance

C_ob

V_CB=-10V,I_E=0,f=1MHz

CLASSIFICATION OF hFE

(1)

Rank

Range

120-200

200-350

300-400

中文翻译

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