JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SS8550 TRANSISTOR (PNP)
SOT–23
FEATURES
High Collector Current
Complementary to SS8050
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
2. EMITTER
3. COLLECTOR
Collector-Base Voltage
-40
Collector-Emitter Voltage
Emitter-Base Voltage
-25
V
-5
V
Collector Current
-1.5
A
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
300
mW
℃/W
℃
PC
417
RΘJA
Tj
150
Storage Temperature
Tstg
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
V(BR)CBO
IC=-100µA, IE=0
-40
V
Collector-base breakdown voltage
V(BR)CEO
V(BR)EBO
ICBO
IC=-0.1mA, IB=0
-25
-5
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IE=-100µA, IC=0
V
VCB=-40V, IE=0
-100
-100
-100
400
nA
nA
nA
ICEO
VCE=-20V, IB=0
Collector cut-off current
IEBO
VEB=-5V, IC=0
Emitter cut-off current
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800mA, IB=-80mA
IC=-800mA, IB=-80mA
VCE=-1V, IC=-10mA
VCE=-10V,IC=-50mA , f=30MHz
VCB=-10V, IE=0, f=1MHz
120
40
DC current gain
-0.5
-1.2
-1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
V
fT
100
MHz
pF
Transition frequency
Cob
20
Collector output capacitance
CLASSIFICATION OF hFE(1)
RANK
L
H
200–350
Y2
J
RANGE
120–200
300–400
MARKING
A,Apr,2011