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SS8550CBU PDF预览

SS8550CBU

更新时间: 2024-11-22 11:12:07
品牌 Logo 应用领域
安森美 - ONSEMI 放大器晶体管
页数 文件大小 规格书
6页 162K
描述
PNP外延硅晶体管

SS8550CBU 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
Factory Lead Time:1 week风险等级:1.04
Is Samacsys:N最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):120JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

SS8550CBU 数据手册

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DATA SHEET  
www.onsemi.com  
PNP Epitaxial Silicon  
Transistor  
TO−92−3  
CASE 135AN  
SS8550  
1
2
3
Features  
2 W Output Amplifier of Portable Radios in Class B Push−Pull  
Operation  
Complementary to SS8050  
TO−92−3  
CASE 135AR  
Collector Current: I = 1.5 A  
C
1
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
2
3
Compliant  
1. Emitter  
2. Base  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
3. Collector  
Parameter  
Collector−Base Voltage  
Collector−Emitter Voltage  
Emitter−Base Voltage  
Collector Current  
Symbol  
Value  
−40  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
MARKING DIAGRAM  
−25  
V
−6  
V
AS8  
550x  
YWW  
I
C
−1.5  
A
Junction Temperature  
Storage Temperature  
T
J
150  
°C  
°C  
T
STG  
−65 to 150  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
S8550x  
= Specific Device Code  
Line 1: A = Assembly Location  
Line 2: x = C or D  
THERMAL CHARACTERISTICS (Note 1)  
Line 3: Y = Year  
(T = 25°C unless otherwise noted)  
A
WW= Work Week  
Parameter  
Power Dissipation  
Symbol  
Value  
1
Unit  
W
P
D
D
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Power Dissipation Derate Above 25°C  
P
8
mW/°C  
°C/W  
Thermal Resistance,  
Junction−to−Ambient  
R
125  
q
JA  
1. PCB size: FR−4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)  
with minimum land pattern size.  
© Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
August, 2021 − Rev. 3  
SS8550/D  
 

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