SS8550C-G

更新时间： 2024-11-21 13:13:59

品牌	Logo	应用领域
WEITRON		晶体晶体管
页数	文件大小	规格书
4页	103K
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中文翻译

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数据手册

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SS8550C-G 数据手册

SS8550

Plastic-Encapsulate Transistors

PNP Silicon

TO-92

COLLECTOR

BASE

1. EMITTER

2. BASE

EMITTER

3. COLLECTOR

ABSOLUTE MAXIMUM RATINGS

(Ta=25 C)

SS8550

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol

Unit

Vdc

Adc

-25

-40

CEO

CBO

-5.0

-1.5

EBO

Total Device Dissipation T =25 C

1.0

150

Junction Temperature

Storage Temperature

-55 to +150

Tstg

DEVICE MARKING

SS8550=SS8550D

ELECTRICAL CHARACTERISTICS

Characteristics

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage⁽¹⁾(I = -0.1 mAdc, I =0)

-25

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

-40

Vdc

Collector-Base Breakdown Voltage (I = -100 uAdc, I =0)

-5.0

Emitter-Base Breakdown Voltage (I = -100 uAdc, I =0)

-0.1

uAdc

Collector Cutoff Current (V = -40 Vdc, I =0 Vdc)

CBO

Emitter Cutoff Current(V = -5 Vdc, I =0 Vdc)

EBO

1. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%

WEITRON

http://www.weitron.com.tw

12 3 4

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