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SPP04N50C3 PDF预览

SPP04N50C3

更新时间: 2024-01-10 19:33:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
13页 293K
描述
Cool MOS™ Power Transistor

SPP04N50C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.81
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):130 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):4.5 A
最大漏极电流 (ID):4.5 A最大漏源导通电阻:0.95 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):13.5 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SPP04N50C3 数据手册

 浏览型号SPP04N50C3的Datasheet PDF文件第2页浏览型号SPP04N50C3的Datasheet PDF文件第3页浏览型号SPP04N50C3的Datasheet PDF文件第4页浏览型号SPP04N50C3的Datasheet PDF文件第5页浏览型号SPP04N50C3的Datasheet PDF文件第6页浏览型号SPP04N50C3的Datasheet PDF文件第7页 
SPP04N50C3, SPB04N50C3  
SPA04N50C3  
Final data  
Cool MOS™ Power Transistor  
V
@ T  
560  
0.95  
4.5  
V
A
DS  
jmax  
Feature  
R
DS(on)  
New revolutionary high voltage technology  
Ultra low gate charge  
I
D
P-TO220-3-31  
P-TO263-3-2  
P-TO220-3-1  
Periodic avalanche rated  
Extreme dv/dt rated  
3
Ultra low effective capacitances  
Improved transconductance  
2
1
P-TO220-3-31  
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)  
Type  
Package  
Ordering Code  
Marking  
SPP04N50C3  
SPB04N50C3  
SPA04N50C3  
P-TO220-3-1 Q67040-S4575  
P-TO263-3-2 Q67040-S4573  
P-TO220-3-31 Q67040-S4572  
04N50C3  
04N50C3  
04N50C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
SPP_B  
Unit  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
4.5  
2.8  
4.5  
2.8  
C
1)  
T = 100 °C  
C
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
D puls  
13.5  
130  
13.5  
130  
A
mJ  
p
jmax  
E
AS  
I =3.4A, V =50V  
D
DD  
2)  
jmax  
E
Avalanche energy, repetitive t limited by T  
0.4  
0.4  
AR  
AR  
I =4.5A, V =50V  
D
DD  
Avalanche current, repetitive t limited by T  
Gate source voltage  
I
AR  
4.5  
±20  
±30  
50  
4.5  
±20  
±30  
31  
A
V
AR  
jmax  
V
V
P
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
W
C
Operating and storage temperature  
T , T  
-55...+150  
°C  
j
stg  
Page 1  
2003-10-07  

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