SPD08N05L

更新时间： 2024-11-09 09:09:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	121K
描述
SIPMOS-R POWER TRANSISTOR

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中文翻译

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数据手册

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SPD08N05L 数据手册

SPD 08N05L

SIPMOS PowerTransistor

Product Summary

Features

Drain source voltage

0.1

8.4

• N channel

Drain-Source on-state resistance

Continuous drain current

Ω

• Enhancement mode

DS(on)

• Avalanche rated

• Logic Level

• d

v/dt rated

• 175˚C operating temperature

Pin 1 Pin 2 Pin 3

Type

Package

P-TO252

P-TO251

Ordering Code

Packaging

SPD08N05L

SPU08N05L

Q67040-S4134

Tape and Reel

Q67040-S4182-A2 Tube

MaximumRatings , at

= 25 ˚C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

= 25 ˚C

8.4

5.9

= 100 ˚C

Pulsed drain current

= 25 ˚C

IDpulse

Avalanche energy, single pulse

= 8.4 A, = 25 V, = 25 Ω

2.4

Avalanche energy, periodic limited by

Reverse diode d /d

= 8.4 A, = 40 V, di/dt = 200 A/µs,

jmax

kV/µs

= 175 ˚C

jmax

Gate source voltage

Power dissipation

±20

tot

= 25 ˚C

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55... +175

55/175/56

˚C

T , T

j stg

Data Sheet

06.99

12 3 4 5 6 7 8

中文翻译

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