Datasheet > SPD08N50C3BT

SPD08N50C3BT

更新时间： 2024-11-27 19:39:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	691K
描述
Power Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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SPD08N50C3BT 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.71
Base Number Matches：	1

SPD08N50C3BT 数据手册

SPD08N50C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

@ T

560

0.6

7.6

Ω

jmax

DS(on)

• Worldwide best R

in TO-252

DS(on)

PG-TO252

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

; available in Halogen free mold compound^a)

Type

SPD08N50C3

Package

PG-TO252

Ordering Code

Q67040-S4569

Marking

08N50C3

Maximum Ratings, at T = 25°C, unless otherwise specified

Parameter

Symbol

Value

Unit

Continuous drain current

T = 25 °C

7.6

4.6

T = 100 °C

22.8

230

Pulsed drain current, t limited by T

Avalanche energy, single pulse

D puls

jmax

I =5.5A, V =50V

0.5

Avalanche energy, repetitive t limited by T

jmax

I =7.6A, V =50V

7.6

±20

Avalanche current, repetitive t limited by T

Gate source voltage

jmax

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

°C

V/ns

Operating and storage temperature

Reverse diode dv/dt

T , T

dv/dt

-55... +150

stg

^a)non-Halogen free (OPN: SPD08N50C3BT); Halogen free (OPN: SPD08N50C3AT)

2.6

2013-07-31

2008-04-11

Rev. 2.5

Page 1

12 3 4 5 6 7...11

中文翻译

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