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SPD08N50C3_08 PDF预览

SPD08N50C3_08

更新时间: 2024-11-24 09:09:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
11页 611K
描述
Cool MOS Power Transistor

SPD08N50C3_08 数据手册

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SPD08N50C3  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
V
@ T  
560  
0.6  
7.6  
V
A
DS  
jmax  
R
DS(on)  
I
D
Worldwide best R  
in TO-252  
DS(on)  
PG-TO252  
Ultra low gate charge  
Periodic avalanche rated  
Extreme dv/dt rated  
Ultra low effective capacitances  
Improved transconductance  
Type  
SPD08N50C3  
Package  
PG-TO252  
Ordering Code  
Q67040-S4569  
Marking  
08N50C3  
Maximum Ratings, at T = 25°C, unless otherwise specified  
C
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T = 25 °C  
7.6  
4.6  
C
T = 100 °C  
C
22.8  
230  
Pulsed drain current, t limited by T  
Avalanche energy, single pulse  
I
D puls  
p
jmax  
mJ  
E
AS  
I =5.5A, V =50V  
D
DD  
1)  
E
0.5  
Avalanche energy, repetitive t limited by T  
AR  
AR  
jmax  
I =7.6A, V =50V  
D
DD  
7.6  
±20  
30  
A
V
Avalanche current, repetitive t limited by T  
Gate source voltage  
I
AR  
AR  
jmax  
V
V
P
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
83  
W
Power dissipation, T = 25°C  
C
°C  
V/ns  
Operating and storage temperature  
Reverse diode dv/dt  
T , T  
dv/dt  
-55... +150  
j
stg  
6)  
15  
Rev. 2.5  
Page 1  
2008-04-11  

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