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SPD08P06P G PDF预览

SPD08P06P G

更新时间: 2024-11-25 11:14:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 599K
描述
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

SPD08P06P G 数据手册

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SPD08P06P G  
SIPMOS® Power-Transistor  
Product Summary  
Features  
V DS  
-60  
0.3  
V
A
• P-Channel  
R DS(on),max  
I D  
• Enhancement mode  
-8.8  
• Avalanche rated  
• dv /dt rated  
PG-TO252-3  
• 175°C operating temperature  
• Pb-free lead finishing; RoHS compliant  
° Qualified according to AEC Q101  
Type  
Package  
Tape and reel information  
Marking Lead free  
08P06P Yes  
Packing  
SPD08P06PG PG-TO252-3  
1000 pcs / reel  
Non dry  
Value  
Parameter  
Symbol Conditions  
Unit  
steady state  
I D  
T A=25 °C  
T A=100 °C  
T A=25 °C  
-8.83  
Continuous drain current  
A
-6.25  
I D,pulse  
E AS  
-35.32  
Pulsed drain current  
I D=8.83 A, R GS=25  
70  
Avalanche energy, single pulse  
mJ  
Avalanche energy, periodic limited by  
Tjmax  
E AR  
4.2  
I D=8.83 A, V DS=48 V,  
di /dt =-200 A/µs,  
-6  
Reverse diode dv /dt  
dv /dt  
kV/µs  
T
j,max=175 °C  
V GS  
±20  
42  
Gate source voltage  
V
P tot  
T A=25 °C  
Power dissipation  
W
°C  
T j, T stg  
"-55 ... +175"  
Operating and storage temperature  
ESD class  
260 °C  
Soldering temperature  
IEC climatic category; DIN IEC 68-1  
55/175/56  
Rev 1.92  
page 1  
2012-09-10  

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