Datasheet > SPD08P06P_08

SPD08P06P_08

更新时间： 2024-11-24 12:20:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
9页	598K
描述
SIPMOSÂ® Power-Transistor Features P-Channel Enhancement mode

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中文翻译

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数据手册

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SPD08P06P_08 数据手册

SPD08P06P G

SIPMOS^®Power-Transistor

Product Summary

Features

V _DS

-60

0.3

Ω

• P-Channel

R _DS(on),max

I _D

• Enhancement mode

-8.8

• Avalanche rated

• dv /dt rated

PG-TO252-3

• 175°C operating temperature

• Pb-free lead finishing; RoHS compliant

Type

Package

Tape and reel information

Marking Lead free

08P06P Yes

Packing

SPD08P06PG PG-TO252-3

1000 pcs / reel

Non dry

Value

Parameter

Symbol Conditions

Unit

steady state

I _D

T _A=25 °C

T _A=100 °C

T _A=25 °C

-8.83

Continuous drain current

-6.25

I _D,pulse

E _AS

-35.32

Pulsed drain current

I _D=8.83 A, R _GS=25 Ω

Avalanche energy, single pulse

Avalanche energy, periodic limited by

T_jmax

E _AR

4.2

I _D=8.83 A, V _DS=48 V,

di /dt =-200 A/µs,

-6

Reverse diode dv /dt

dv /dt

kV/µs

_j,max=175 °C

V _GS

±20

Gate source voltage

P _tot

T _A=25 °C

Power dissipation

°C

T _j, T _stg

"-55 ... +175"

Operating and storage temperature

ESD class

260 °C

Soldering temperature

IEC climatic category; DIN IEC 68-1

55/175/56

Rev 1.9

page 1

2008-10-13

12 3 4 5 6 7...9

中文翻译

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