生命周期: | Obsolete | 零件包装代码: | DO-204 |
包装说明: | CASE D61, SEMITRANS 2, 7 PIN | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.81 | Is Samacsys: | N |
其他特性: | UL RECOGNIZED | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 50 A | 集电极-发射极最大电压: | 1200 V |
配置: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X7 | 元件数量: | 2 |
端子数量: | 7 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 310 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 445 ns | 标称接通时间 (ton): | 130 ns |
VCEsat-Max: | 2.7 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SKM50GB123D_06 | SEMIKRON |
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IGBT Modules | |
SKM50GB123D_1 | SEMIKRON |
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SEMITRANS㈢ M IGBT Modules | |
SKM50GB12T4 | SEMIKRON |
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IGBT4 Modules | |
SKM50GB12T4_09 | SEMIKRON |
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Fast IGBT4 Modules | |
SKM50GB12V | SEMIKRON |
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SKM50GB12V | |
SKM50GD063DL | SEMIKRON |
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SEMITRANS M Superfast NPT-IGBT Modules | |
SKM50GD125D | SEMIKRON |
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Insulated Gate Bipolar Transistor, 73A I(C), 1200V V(BR)CES | |
SKM50GDL063D | SEMIKRON |
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Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, CASE D73, 17 PIN | |
SKM50GDL063DL | SEMIKRON |
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SEMITRANS M Superfast NPT-IGBT Modules | |
SKM50GH063DL | SEMIKRON |
获取价格 |
SEMITRANS M Superfast NPT-IGBT Modules |