Datasheet > SKM50GB063D_10

SKM50GB063D_10

更新时间： 2024-11-05 09:24:07

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
5页	409K
描述
Superfast NPT-IGBT Modules

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中文翻译

获取价格

数据手册

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SKM50GB063D_10 数据手册

SKM50GB063D

Absolute Maximum Ratings

Symbol Conditions

IGBT

Values

Unit

T_j= 25 °C

V_CES

I_C

600

T_c= 25 °C

T_c= 75 °C

T_j= 150 °C

I_Cnom

I_CRM

V_GES

I_CRM= 2xI_Cnom

100

-20 ... 20

SEMITRANS^®2

V_CC= 300 V

V_GE≤ 20 V

V_CES≤ 600 V

T_j= 125 °C

t_psc

µs

°C

T_j

-55 ... 150

Superfast NPT-IGBT

Modules

Inverse diode

T_c= 25 °C

T_c= 80 °C

I_F

SKM50GB063D

I_Fnom

I_FRM

I_FSM

T_j

I_FRM= 2xI_Fnom

100

Target Data

t_p= 10 ms, sin 180°, T_j= 25 °C

Features

• NPT = non punch-through

IGBT technology

• High short circuit capability, self

limiting to 6 x IC

• Pos. temp.-coeff. of VCEsat

• Isolated copper baseplate

-40 ... 150

°C

Module

I_t(RMS)

T_stg

T_terminal< 80 °C

200

-40 ... 125

2500

°C

V_isol

AC sinus 50Hz, t = 1 min

Characteristics

Symbol Conditions

IGBT

Typical Applications*

• Switched mode power supplies

• UPS

• Three phase inverters for servo / AC

motor speed control

min.

typ.

max.

Unit

I_C= 50 A

V_CE(sat)

T_j= 25 °C

2.1

2.4

2.5

2.8

_GE= 15 V

T_j= 125 °C

chiplevel

T_j= 25 °C

T_j= 125 °C

T_j= 25 °C

T_j= 125 °C

V_CE0

r_CE

1.05

1.3

1.2

21.0

28.0

5.5

0.1

24.0

32.0

6.5

mΩ

V_GE= 15 V

V_GE(th)

I_CES

V_GE=V_CE, I_C= 1 mA

V_GE= 0 V

4.5

T_j= 25 °C

0.3

Ω

_CE= 600 V

f = 1 MHz

C_ies

C_oes

C_res

Q_G

2.2

0.2

V_CE= 25 V

_GE= 0 V

V_GE= - 8 V...+ 20 V

T_j= 25 °C

V_CC= 300 V

I_C= 50 A

R_Gint

t_d(on)

t_r

T_j= 125 °C

_GE= ±15 V

E_on

t_d(off)

t_f

2.5

300

_{G on}= 22 Ω

_{G off}= 22 Ω

T_j= 125 °C

E_off

1.8

R_th(j-c)

per IGBT

0.5

K/W

Rev. 2 – 22.04.2010

12 3 4 5

中文翻译

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