Datasheet > SiSA01DN

SiSA01DN

更新时间： 2024-10-16 14:53:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	241K
描述
P-Channel 30 V (D-S) MOSFET

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SiSA01DN 数据手册

SiSA01DN

Vishay Siliconix

www.vishay.com

P-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen IV p-channel power MOSFET

PowerPAK^®1212-8 Single

• Provides exceptionally low R_DS(ON)in a compact

package that is thermally enhanced

• Enables higher power density

• 100 % R_gand UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

Top View

Bottom View

• Battery management in mobile devices

PRODUCT SUMMARY

V_DS(V)

R_DS(on)max. () at V_GS= 10 V

• Adapter and charger switch

-30

0.0049

0.0082

• Battery switch

• Load switch

R_DS(on)max. () at V_GS= 4.5 V

Q_gtyp. (nC)

I_D(A)

60 ^{a, g}

P-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAK 1212-8

SiSA01DN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-30

+16 / -20

-60 ^a

-22.4 ^{b, c}

18.4 ^{b, c}

-150

-47.2

-3.3 ^{b, c}

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

-25

31.2

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

I_P

3.7 ^{b, c}

2.4 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^c

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^b

SYMBOL

R_thJA

R_thJF

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

2.4

°C/W

Maximum junction-to-case (drain)

1.9

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 81 °C/W

g. T_C= 25 °C

S17-1370-Rev. A, 04-Sep-17

Document Number: 76198

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiSA01DN相关器件

型号	品牌	获取价格	描述	数据表
SISA04DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SISA04DN-T1-GE3	VISHAY	获取价格	MOSFET N-CH 30V 1212-8
SiSA10BDN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SISA10DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiSA12ADN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiSA12BDN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiSA14BDN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SISA14DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiSA16DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SISA18ADN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET

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