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SISC0.5N10E PDF预览

SISC0.5N10E

更新时间: 2024-11-18 19:59:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体管
页数 文件大小 规格书
1页 24K
描述
Small Signal Field-Effect Transistor, 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2

SISC0.5N10E 技术参数

生命周期:Obsolete零件包装代码:DIE
包装说明:UNCASED CHIP, R-XUUC-N2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.4配置:SINGLE
最小漏源击穿电压:100 V最大漏源导通电阻:6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XUUC-N2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:UNCASED CHIP
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:UPPER晶体管元件材料:SILICON
Base Number Matches:1

SISC0.5N10E 数据手册

  

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