生命周期: | Obsolete | 零件包装代码: | DIE |
包装说明: | UNCASED CHIP, R-XUUC-N2 | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.4 | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏源导通电阻: | 6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-XUUC-N2 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | UNCASED CHIP |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SISC0.5N65E | INFINEON |
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Small Signal Field-Effect Transistor, 65V, 1-Element, N-Channel, Silicon, Metal-oxide Semi | |
SISC0.5P05E | INFINEON |
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Small Signal Field-Effect Transistor, 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semi | |
SISC0.5P06E | INFINEON |
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Small Signal Field-Effect Transistor, 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semi | |
SISC0.6N24E | INFINEON |
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Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Sem | |
SISC0.6N25D | INFINEON |
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Small Signal Field-Effect Transistor, 250V, 1-Element, N-Channel, Silicon, Metal-oxide Sem | |
SiSC06DN | VISHAY |
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N-Channel 30 V (D-S) MOSFET | |
SISC1.4N24D | INFINEON |
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Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Sem | |
SISC1.4N24E | INFINEON |
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Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Sem | |
SISC1.4N40E | INFINEON |
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Small Signal Field-Effect Transistor, 400V, 1-Element, N-Channel, Silicon, Metal-oxide Sem | |
SISC1.4N60E | INFINEON |
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Small Signal Field-Effect Transistor, 600V, 1-Element, N-Channel, Silicon, Metal-oxide Sem |