Datasheet > SiSD5300DN

SiSD5300DN

更新时间： 2024-11-22 14:55:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	191K
描述
N-Channel 30 V (D-S) MOSFET

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SiSD5300DN 数据手册

SiSD5300DN

Vishay Siliconix

www.vishay.com

N-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen V power MOSFET

PowerPAK^®1212-F

• Very low R_DSx Q_gfigure-of-merit (FOM)

• Source flip technology, enhance thermal

performance

• 100 % R_gand UIS tested

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• DC/DC converter

Top View

Bottom View

• Synchronous rectification

• Battery management

PRODUCT SUMMARY

V_DS(V)

R_DS(on)max. (Ω) at V_GS= 10 V

R_DS(on)max. (Ω) at V_GS= 4.5 V

Q_gtyp. (nC)

0.00087

0.00130

• Oring and load switch

I_D(A)

Configuration

198 ^a

Single

N-Channel MOSFET

ORDERING INFORMATION

Package

PowerPAK 1212-F

Lead (Pb)-free and halogen-free

SiSD5300DN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

+16, -12

198

UNIT

V_DS

V_GS

_C= 25 °C

_C= 70 °C

158

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

62 ^{b, c}

50 ^{b, c}

500

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

4.9 ^{b, c}

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

5.4 ^{b, c}

3.5 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (source)

SMYBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t ≤ 10 s

Steady state

1.7

2.2

°C/W

Notes

a. Based on T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-F is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 56 °C/W

S23-0191-Rev. A, 10-Apr-2023

Document Number: 62220

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与SiSD5300DN相关器件

型号	品牌	获取价格	描述	数据表
SiSF00DN	VISHAY	获取价格	Common - Drain Dual N-Channel 30 V (S1-S2) MOSFET
SISF00DN-T1-GE3	VISHAY	获取价格	MOSFET DUAL N-CH 30V POWERPAK 12
SiSF02DN	VISHAY	获取价格	Common Drain Dual N-Channel 25 V (S1-S2) MOSFET
SiSF04DN	VISHAY	获取价格	Common Drain Dual N-Channel 30 V (S1-S2) MOSFET
SiSF06DN	VISHAY	获取价格	Common Drain Dual N-Channel 30 V (S1-S2) MOSFET
SiSF20DN	VISHAY	获取价格	Common - Drain Dual N-Channel 60 V (S1-S2) MOSFET
SiSH101DN	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SiSH106DN	VISHAY	获取价格	N-Channel 20 V (D-S) Fast Switching MOSFET
SiSH108DN	VISHAY	获取价格	N-Channel 20 V (D-S) Fast Switching MOSFET
SiSH110DN	VISHAY	获取价格	N-Channel 20 V (D-S) Fast Switching MOSFET

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