Datasheet > SiSA72ADN

SiSA72ADN

更新时间： 2024-11-19 14:54:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	264K
描述
N-Channel 40 V (D-S) MOSFET

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SiSA72ADN 数据手册

SiSA72ADN

Vishay Siliconix

www.vishay.com

N-Channel 40 V (D-S) MOSFET

FEATURES

PowerPAK^®1212-8 Single

• TrenchFET^®Gen IV power MOSFET

• Tuned for the lowest R_DS-Q_ossFOM

• 100 % R_gand UIS tested

• Q_gd/Q_gsratio < 1 optimizes switching

characteristics

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

Top View

Bottom View

• Synchronous rectification

• High power density DC/DC

• DC/AC inverters

PRODUCT SUMMARY

V_DS(V)

0.00342

0.00466

14.8

R_DS(on)max. () at V_GS= 10 V

R_DS(on)max. () at V_GS= 4.5 V

Q_gtyp. (nC)

• Battery and load switch

I_D(A)

N-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

PowerPAK 1212-8

Lead (Pb)-free and halogen-free

SiSA72ADN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

+20, -16

T_C= 25 °C

_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous drain current (T_J= 150 °C)

I_D

24.8 ^{b, c}

19.8 ^{b, c}

150

47.2

3.3 ^{a, b}

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 25 °C

Single pulse avalanche current

Single pulse avalanche Energy

I_AS

L = 0.1 mH

E_AS

11.25

33.3

_C= 25 °C

_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

3.7 ^{a, b}

2.4 ^{a, b}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient ^{b, f}

t  10 s

Steady state

°C/W

Maximum junction-to-case (drain)

R_thJC

1.9

2.4

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 81 °C/W

S20-0582-Rev. B, 03-Aug-2020

Document Number: 79409

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiSA72ADN相关器件

型号	品牌	获取价格	描述	数据表
SISA72DN	VISHAY	获取价格	N-Channel 40 V (D-S) MOSFET
SiSA84DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiSA88DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SISA96DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SISB46DN	VISHAY	获取价格	Dual N-Channel 40 V (D-S) MOSFET
SISB46DN-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SISC0.5N05E	INFINEON	获取价格	Small Signal Field-Effect Transistor, 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semi
SISC0.5N10E	INFINEON	获取价格	Small Signal Field-Effect Transistor, 100V, 1-Element, N-Channel, Silicon, Metal-oxide Sem
SISC0.5N65E	INFINEON	获取价格	Small Signal Field-Effect Transistor, 65V, 1-Element, N-Channel, Silicon, Metal-oxide Semi
SISC0.5P05E	INFINEON	获取价格	Small Signal Field-Effect Transistor, 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semi

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