5秒后页面跳转
SISA72DN PDF预览

SISA72DN

更新时间: 2024-11-19 01:18:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
13页 656K
描述
N-Channel 40 V (D-S) MOSFET

SISA72DN 数据手册

 浏览型号SISA72DN的Datasheet PDF文件第2页浏览型号SISA72DN的Datasheet PDF文件第3页浏览型号SISA72DN的Datasheet PDF文件第4页浏览型号SISA72DN的Datasheet PDF文件第5页浏览型号SISA72DN的Datasheet PDF文件第6页浏览型号SISA72DN的Datasheet PDF文件第7页 
SiSA72DN  
Vishay Siliconix  
www.vishay.com  
N-Channel 40 V (D-S) MOSFET  
FEATURES  
• TrenchFET® Gen IV power MOSFET  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) () (MAX.)  
ID (A) f, g Qg (TYP.)  
• 100 % Rg and UIS tested  
0.0035 at VGS = 10 V  
0.0048 at VGS = 4.5 V  
60  
40  
19.5 nC  
60  
• Tuned for the lowest RDS-Qoss FOM  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
PowerPAK® 1212-8 Single  
D
D
7
8
D
6
D
5
APPLICATIONS  
D
• DC/DC power supplies  
• Synchronous rectification  
• Motor drive control  
1
2
S
G
• Telecom POL and bricks  
S
3
S
4
G
• Battery protection  
1
Top View  
Bottom View  
S
Ordering Information:   
SiSA72DN-T1-GE3 (lead (Pb)-free and halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
Gate-Source Voltage  
SYMBOL  
LIMIT  
40  
UNIT  
VDS  
V
VGS  
+20, -16  
60 g  
60 g  
24.2 a, b  
19.5 a, b  
150  
TC = 25 °C  
C = 70 °C  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
Pulsed Drain Current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
47.2  
3.3 a, b  
20  
Continuous Source-Drain Diode Current  
TA = 25 °C  
L = 0.1 mH  
TC = 25 °C  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
IAS  
EAS  
20  
52  
33.3  
3.7 a, b  
2.4 a, b  
-55 to 150  
260  
mJ  
W
TC = 70 °C  
Maximum Power Dissipation  
PD  
TA = 25 °C  
TA = 70 °C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature) c, d  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum Junction-to-Ambient a, e  
Maximum Junction-to-Case (Drain)  
SYMBOL  
RthJA  
RthJC  
TYPICAL  
24  
MAXIMUM  
UNIT  
t 10 s  
Steady State  
33  
2.4  
°C/W  
1.9  
Notes  
a. Surface mounted on 1" x 1" FR4 board.  
b. t = 10 s.  
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection.  
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
e. Maximum under steady state conditions is 81 °C/W.  
f. Based on TC = 25 °C.  
g. Package limited.  
S16-1125-Rev. A, 06-Jun-16  
Document Number: 75680  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SISA72DN相关器件

型号 品牌 获取价格 描述 数据表
SiSA84DN VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SiSA88DN VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SISA96DN VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SISB46DN VISHAY

获取价格

Dual N-Channel 40 V (D-S) MOSFET
SISB46DN-T1-GE3 VISHAY

获取价格

Power Field-Effect Transistor,
SISC0.5N05E INFINEON

获取价格

Small Signal Field-Effect Transistor, 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semi
SISC0.5N10E INFINEON

获取价格

Small Signal Field-Effect Transistor, 100V, 1-Element, N-Channel, Silicon, Metal-oxide Sem
SISC0.5N65E INFINEON

获取价格

Small Signal Field-Effect Transistor, 65V, 1-Element, N-Channel, Silicon, Metal-oxide Semi
SISC0.5P05E INFINEON

获取价格

Small Signal Field-Effect Transistor, 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semi
SISC0.5P06E INFINEON

获取价格

Small Signal Field-Effect Transistor, 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semi