Datasheet > SISA96DN

SISA96DN

更新时间： 2024-11-19 01:18:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	211K
描述
N-Channel 30 V (D-S) MOSFET

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SISA96DN 数据手册

SiSA96DN

Vishay Siliconix

www.vishay.com

N-Channel 30 V (D-S) MOSFET

FEATURES

PowerPAK^®1212-8 Single

• TrenchFET^®Gen IV power MOSFET

• Tuned for reducing transient spikes

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Synchronous buck converter

• High power density DC/DC

Top View

Bottom View

PRODUCT SUMMARY

V_DS(V)

R_DS(on)max. () at V_GS= 10 V

• Motor drive control

• Battery management

• Load switch

0.0088

0.0120

9.9

R_DS(on)max. () at V_GS= 4.5 V

Q_gtyp. (nC)

I_D(A)

16 ^{a, g}

N-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAK 1212-Single

SiSA96DN-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

+20 / -16

16 ^a

V_GS

T_C= 25 °C

_C= 70 °C

T_A= 25 °C

T_A= 70 °C

12 ^a

Continuous drain current (T_J= 150 °C)

I_D

14.8 ^{b, c}

12 ^{b, c}

16 ^a

3.2 ^{b, c}

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

11.25

26.5

3.5^{, c}

2.3 ^{b, c}

-55 to +150

260

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^c

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^b

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

4.7

°C/W

Maximum junction-to-case (drain)

3.8

Notes

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

g. T_C= 25 °C.

S16-2301-Rev. A, 14-Nov-16

Document Number: 75285

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SISA96DN相关器件

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SISB46DN	VISHAY	获取价格	Dual N-Channel 40 V (D-S) MOSFET
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SISC0.5N05E	INFINEON	获取价格	Small Signal Field-Effect Transistor, 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semi
SISC0.5N10E	INFINEON	获取价格	Small Signal Field-Effect Transistor, 100V, 1-Element, N-Channel, Silicon, Metal-oxide Sem
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SISC0.6N24E	INFINEON	获取价格	Small Signal Field-Effect Transistor, 240V, 1-Element, N-Channel, Silicon, Metal-oxide Sem
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