SiS454DN
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
ID (A)a
35
Qg (Typ.)
Definition
0.0037 at VGS = 10 V
0.0054 at VGS = 4.5 V
•
•
TrenchFET® Power MOSFET
100 % Rg Tested
20
18.5 nC
35
• 100 % UIS Tested
®
PowerPAK 1212-8
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
S
3.30 mm
3.30 mm
D
1
S
•
DC/DC Converter
- Notebook
- POL
2
S
3
G
4
D
8
D
G
7
D
6
D
5
S
Bottom View
Ordering Information: SiS454DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
35a
35a
25b, c
20b, c
100
T
T
C = 25 °C
C = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
TA = 25 °C
TA = 70 °C
A
Pulsed Drain Current
Avalanche Current
Avalanche Energy
IDM
IAS
30
L = 0.1 mH
EAS
mJ
A
45
35a
3.2b, c
T
C = 25 °C
Continuous Source-Drain Diode Current
IS
TA = 25 °C
T
T
C = 25 °C
C = 70 °C
52
33
Maximum Power Dissipation
PD
W
3.8b, c
2b, c
- 55 to 150
260
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Symbol
Typical
24
Maximum
Unit
RthJA
RthJC
t ≤ 10 s
Steady State
33
°C/W
Maximum Junction-to-Case (Drain)
1.9
2.4
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 66707
S10-1284-Rev. A, 31-May-10
www.vishay.com
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