Datasheet > SIS476DN

SIS476DN

更新时间： 2024-10-14 12:21:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	579K
描述
N-Channel 30 V (D-S) MOSFET

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SIS476DN 数据手册

New Product

SiS476DN

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω) (Max.)

0.0025 at V_GS= 10 V

0.0035 at V_GS= 4.5 V

I_D(A)^f

40^g

Q_g(Typ.)

Definition

•

TrenchFET^®Gen IV Power MOSFET

100 % R_gand UIS Tested

22.5 nC

Compliant to RoHS Directive 2002/95/EC

PowerPAK^®1212-8

APPLICATIONS

•

Switch Mode Power Supplies

Personal Computers and Servers

Telecom Bricks

3.30 mm

VRM’s and POL

Bottom View

N-Channel MOSFET

Ordering Information:

SiS476DN-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

+ 20, - 16

40^g

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

40^g

I_D

Continuous Drain Current (T_J= 150 °C)

28.6^{a, b}

26.2^{a, b}

40^g

3.3^{a, b}

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

3.7^{a, b}

3.1^{a, b}

- 55 to 150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{c, d}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, e}

Maximum Junction-to-Case (Drain)

t ≤ 10 s

Steady State

°C/W

1.9

2.4

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Maximum under steady state conditions is 81 °C/W.

f. Based on T_C= 25 °C.

g. Package limited.

Document Number: 63583

S11-2310-Rev. A, 21-Nov-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与SIS476DN相关器件

型号	品牌	获取价格	描述	数据表
SIS478DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIS478DN-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
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SiS590DN	VISHAY	获取价格	N- and P-Channel 100 V (D-S) MOSFET
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