Datasheet > SiS822DNT

SiS822DNT

更新时间： 2024-10-15 14:54:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	186K
描述
N-Channel 30 V (D-S) MOSFET

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SiS822DNT 数据手册

SiS822DNT

Vishay Siliconix

www.vishay.com

N-Channel 30 V (D-S) MOSFET

FEATURES

PowerPAK^®1212-8T Single

• TrenchFET^®power MOSFET

• 100 % R_gand UIS tested

• Thin 0.8 mm profile

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Notebook PC

- System power

- Load switch

Top View

Bottom View

PRODUCT SUMMARY

V_DS(V)

0.024

0.030

3.8

• Synchronous buck high side

_DS(on)max. (Ω) at V_GS= 10 V

_DS(on)max. (Ω) at V_GS= 4.5 V

Q_gtyp. (nC)

_D(A) ^a

Configuration

N-Channel MOSFET

Single

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAK 1212-8T

SiS822DNT-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

UNIT

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

12 ^a

Continuous drain current (T_J= 150 °C)

I_D

8.7 ^{b, c}

7 ^{b, c}

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

12 ^a

2.7 ^{b, c}

Continuous source-drain diode current

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

L = 0.1 mH

1.25

15.6

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

3.2 ^{b, c}

2 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{e, f}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient ^{b, d}

t ≤ 10 s

Steady state

°C/W

Maximum junction-to-case (drain)

6.5

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. Maximum under steady state conditions is 81 °C/W

e. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8T is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

S19-0832-Rev. C, 30-Sep-2019

Document Number: 62965

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiS822DNT相关器件

型号	品牌	获取价格	描述	数据表
SIS822DNT-T1-GE3	VISHAY	获取价格	MOSFET N-CH 30V 12A POWERPAK1212
SIS85	ETC	获取价格	SMT Power Inductor
SIS85-100	ETC	获取价格	SMT Power Inductor
SIS85-101	ETC	获取价格	SMT Power Inductor
SIS85-102	ETC	获取价格	SMT Power Inductor
SIS85-150	ETC	获取价格	SMT Power Inductor
SIS85-151	ETC	获取价格	SMT Power Inductor
SIS85-1R0	ETC	获取价格	SMT Power Inductor
SIS85-1R5	ETC	获取价格	SMT Power Inductor
SIS85-220	ETC	获取价格	SMT Power Inductor

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