Datasheet > SIS612EDNT

SIS612EDNT

更新时间： 2024-10-15 01:23:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	161K
描述
N-Channel 20 V (D-S) MOSFET

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SIS612EDNT 数据手册

SiS612EDNT

Vishay Siliconix

www.vishay.com

N-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

• TrenchFET^®Power MOSFET

V_DS(V)

R_DS(on)() Max.

I_D(A)^{f, g}

Q_g(Typ.)

• 100 % R_gand UIS Tested

• Low Thermal Resistance PowerPAK Package

with Small Size and 0.75 mm Profile

0.0039 at V_GS= 4.5 V

0.0042 at V_GS= 3.7 V

0.0058 at V_GS= 2.5 V

22.5 nC

• Typical ESD performance 3400 V

• Material categorization: 

For definitions of compliance please see

www.vishay.com/doc?99912

Thin PowerPAK^®1212-8

3.30 mm

APPLICATIONS

• Battery Switch / Load Switch

• Power Management for Tablet PCs

and Mobile Computing

0.75 mm

Bottom View

Ordering Information:

SiS612EDNT-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

_C= 70 °C

50^g

24.6^{a, b}

19.7^{a, b}

200

Continuous Drain Current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current (t = 100 μs)

I_DM

I_S

_C= 25 °C

43.3

3.1^{a, b}

Continuous Source-Drain Diode Current

T_A= 25 °C

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

I_AS

L = 0.1 mH

E_AS

_C= 25 °C

_C= 70 °C

Maximum Power Dissipation

P_D

T_A= 25 °C

T_A= 70 °C

3.7^{a, b}

2.4^{a, b}

- 55 to 150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{c, d}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, e}

Symbol

R_thJA

R_thJC

Typical

Maximum

Unit

t  10 s

Steady State

°C/W

Maximum Junction-to-Case (Drain)

1.9

2.4

Notes

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection.

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

e. Maximum under steady state conditions is 81 °C/W.

f. Based on T_C= 25 °C.

g. Package limited.

S13-1675-Rev. A, 29-Jul-13

Document Number: 62874

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与SIS612EDNT相关器件

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