Datasheet > SIHF9610STRL-GE3

SIHF9610STRL-GE3

更新时间： 2024-11-24 15:51:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	196K
描述
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SIHF9610STRL-GE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.1
配置：	Single	最大漏极电流 (Abs) (ID)：	1.8 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高工作温度：	150 °C
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	20 W	子类别：	Other Transistors
表面贴装：	YES	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

SIHF9610STRL-GE3 数据手册

IRF9610S, SiHF9610S

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface Mount

• Available in Tape and Reel

PRODUCT SUMMARY

V_DS(V)

- 200

• Dynamic dV/dt Rating

R_DS(on)()

V_GS= - 10 V

• P-Channel

• Fast Switching

• Ease of Paralleling

Q_g(Max.) (nC)

Q_gs(nC)

• Simple Drive Requirements

• Material categorization: For definitions of

compliance please see www.vishay.com/doc?99912

_gd(nC)

Configuration

Single

Note

* Lead (Pb)-containing terminations are not RoHS-compliant.

Exemptions may apply.

D²PAK (TO-263)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK (TO-263) is a surface mount power package

capable of accommodating die sizes up to HEX-4. It

provides the highest power capability and the lowest

possible on-resistance in any existing surface mount

package. The D²PAK (TO-263) is suitable for high current

applications because of its low internal connection

resistance and can dissipate up to 2 W in a typical surface

mount application.

P-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHF9610S-GE3

SiHF9610STRR-GE3

SiHF9610STRL-GE3

IRF9610SPbF

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

SiHF9610S-E3

IRF9610STRRPbF

IRF9610STRLPbF

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

- 200

V_GS

T_C= 25 °C

_C= 100 °C

- 1.8

Continuous Drain Current

V_GSat - 10 V

I_D

- 1

Pulsed Drain Current^a

I_DM

- 7

Linear Derating Factor

Linear Derating Factor (PCB Mount)^d

0.16

W/°C

0.025

Maximum Power Dissipation

_C= 25 °C

P_D

V/ns

°C

Maximum Power Dissipation (PCB Mount)^d

Peak Diode Recovery dV/dt^b

T_A= 25 °C

- 5

dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^c

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).

b. I_SD - 1.8 A, dI/dt  70 A/μs, V_DD V_DS, T_J 150 °C.

c. 1.6 mm from case.

d. When mounted on 1" square PCB (FR-4 or G-10 material).

S12-1558-Rev. D, 02-Jul-12

Document Number: 91081

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

下载PDF

与SIHF9610STRL-GE3相关器件

型号	品牌	获取价格	描述	数据表
SIHF9620	VISHAY	获取价格	Power MOSFET
SIHF9620-E3	VISHAY	获取价格	Power MOSFET
SIHF9620S-E3	VISHAY	获取价格	TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT,
SIHF9620S-GE3	VISHAY	获取价格	TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND
SIHF9620STL	VISHAY	获取价格	TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3,
SIHF9620STL-E3	VISHAY	获取价格	TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT,
SIHF9620STRL-GE3	VISHAY	获取价格	TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND
SIHF9630	VISHAY	获取价格	Power MOSFET
SIHF9630	KERSEMI	获取价格	Power MOSFET
SIHF9630-E3	KERSEMI	获取价格	Power MOSFET

与SIHF9610STRL-GE3相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

SIHF9610STRL-GE3

SIHF9610STRL-GE3 技术参数

SIHF9610STRL-GE3 数据手册

与SIHF9610STRL-GE3相关器件

与SIHF9610STRL-GE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SIHF9610STRL-GE3

SIHF9610STRL-GE3 技术参数

SIHF9610STRL-GE3 数据手册

与SIHF9610STRL-GE3相关器件

与SIHF9610STRL-GE3相关文章

您还可以找

您在本页遇到什么问题？