SIHF9630S

更新时间： 2024-11-24 13:13:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	547K
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中文翻译

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数据手册

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SIHF9630S 数据手册

IRF9630, SiHF9630

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

- 200

Available

• Repetitive Avalanche Rated

• P-Channel

_DS(on)(Max.) (Ω)

V_GS= - 10 V

0.80

RoHS*

Q_g(Max.) (nC)

5.4

COMPLIANT

• Fast Switching

_gs(nC)

_gd(nC)

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

P-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRF9630PbF

SiHF9630-E3

IRF9630

Lead (Pb)-free

SnPb

SiHF9630

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

- 200

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

- 6.5

- 4.0

- 26

Continuous Drain Current

V_GSat - 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.59

500

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

- 6.4

7.4

E_AR

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

- 5.0

- 55 to + 150

300^d

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 50 V, starting T_J= 25 °C, L = 17 mH, R_G= 25 Ω, I_AS= - 6.5 A (see fig. 12).

c. I_SD≤ - 6.5 A, dI/dt ≤ 120 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91084

S-81272-Rev. B, 16-Jun-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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与SIHF9630S相关器件

型号	品牌	获取价格	描述	数据表
SIHF9630S-GE3	VISHAY	获取价格	TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND
SIHF9630STL	VISHAY	获取价格	暂无描述
SIHF9630STR	VISHAY	获取价格	暂无描述
SIHF9640	VISHAY	获取价格	Power MOSFET
SIHF9640-E3	VISHAY	获取价格	Power MOSFET
SIHF9640L-GE3	VISHAY	获取价格	TRANSISTOR 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND
SIHF9640S	VISHAY	获取价格	TRANSISTOR 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3,
SIHF9640S-E3	VISHAY	获取价格	TRANSISTOR 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, T
SIHF9640STL	VISHAY	获取价格	TRANSISTOR 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3,
SIHF9640STL-E3	VISHAY	获取价格	TRANSISTOR 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, T

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