5秒后页面跳转
SIHF9630S PDF预览

SIHF9630S

更新时间: 2024-01-03 08:51:17
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 547K
描述
暂无描述

SIHF9630S 数据手册

 浏览型号SIHF9630S的Datasheet PDF文件第2页浏览型号SIHF9630S的Datasheet PDF文件第3页浏览型号SIHF9630S的Datasheet PDF文件第4页浏览型号SIHF9630S的Datasheet PDF文件第5页浏览型号SIHF9630S的Datasheet PDF文件第6页浏览型号SIHF9630S的Datasheet PDF文件第7页 
IRF9630, SiHF9630  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
- 200  
Available  
• Repetitive Avalanche Rated  
• P-Channel  
R
DS(on) (Max.) (Ω)  
VGS = - 10 V  
0.80  
RoHS*  
Qg (Max.) (nC)  
29  
5.4  
COMPLIANT  
• Fast Switching  
Q
Q
gs (nC)  
gd (nC)  
• Ease of Paralleling  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
15  
Configuration  
Single  
S
DESCRIPTION  
TO-220  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
S
D
D
G
P-Channel MOSFET  
ORDERING INFORMATION  
Package  
TO-220  
IRF9630PbF  
SiHF9630-E3  
IRF9630  
Lead (Pb)-free  
SnPb  
SiHF9630  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
- 200  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
T
C = 25 °C  
- 6.5  
- 4.0  
- 26  
Continuous Drain Current  
VGS at - 10 V  
ID  
TC = 100 °C  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.59  
500  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
- 6.4  
7.4  
EAR  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
74  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
- 5.0  
- 55 to + 150  
300d  
10  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
°C  
for 10 s  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = - 50 V, starting TJ = 25 °C, L = 17 mH, RG = 25 Ω, IAS = - 6.5 A (see fig. 12).  
c. ISD - 6.5 A, dI/dt ≤ 120 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91084  
S-81272-Rev. B, 16-Jun-08  
www.vishay.com  
1

与SIHF9630S相关器件

型号 品牌 描述 获取价格 数据表
SIHF9630S-GE3 VISHAY TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND

获取价格

SIHF9630STL VISHAY 暂无描述

获取价格

SIHF9630STR VISHAY 暂无描述

获取价格

SIHF9640 VISHAY Power MOSFET

获取价格

SIHF9640-E3 VISHAY Power MOSFET

获取价格

SIHF9640L-GE3 VISHAY TRANSISTOR 11 A, 200 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND

获取价格