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SIHF9630S-GE3 PDF预览

SIHF9630S-GE3

更新时间： 2024-10-15 14:44:43
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
9页 172K
描述
TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

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SIHF9630S-GE3 技术参数

生命周期：Active零件包装代码：D2PAK
包装说明：SMALL OUTLINE, R-PSSO-G2针数：4
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.09其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：500 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：6.5 A
最大漏极电流 (ID)：6.5 A最大漏源导通电阻：0.8 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：74 W最大脉冲漏极电流 (IDM)：26 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SIHF9630S-GE3 数据手册

 浏览型号SIHF9630S-GE3的Datasheet PDF文件第2页浏览型号SIHF9630S-GE3的Datasheet PDF文件第3页浏览型号SIHF9630S-GE3的Datasheet PDF文件第4页浏览型号SIHF9630S-GE3的Datasheet PDF文件第5页浏览型号SIHF9630S-GE3的Datasheet PDF文件第6页浏览型号SIHF9630S-GE3的Datasheet PDF文件第7页 
IRF9630S, SiHF9630S  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Halogen-free According to IEC 61249-2-21  
Definition  
• Surface Mount  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
• Repetitive Avalanche Rated  
• P-Channel  
- 200  
RDS(on) ()  
VGS = - 10 V  
0.80  
Qg (Max.) (nC)  
Qgs (nC)  
29  
5.4  
15  
Q
gd (nC)  
• Fast Switching  
• Ease of Paralleling  
Configuration  
Single  
• Compliant to RoHS Directive 2002/95/EC  
S
DESCRIPTION  
D2PAK (TO-263)  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The D2PAK (TO263) is a surface mount power package  
capable of accommodating die size up to HEX-4. It provides  
the highest power capability and the lowest possible  
on-resistance in any existing surface mount package. The  
D2PAK (TO263) is suitable for high current applications  
because of its low internal connection resistance and can  
dissipate up to 2.0 W in a typical surface mount application.  
D
G
D
P-Channel MOSFET  
S
ORDERING INFORMATION  
Package  
D2PAK (TO263)  
D2PAK (TO263)  
Lead (Pb)-free and Halogen-free  
SiHF9630S-GE3  
IRF9630SPbF  
SiHF9630S-E3  
SiHF9630STRL-GE3a  
IRF9630STRLPbFa  
SiHF9630STL-E3a  
Lead (Pb)-free  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
Drain-Source Voltage  
Gate-Source Voltage  
SYMBOL  
VDS  
LIMIT  
- 200  
20  
UNIT  
V
VGS  
TC = 25 °C  
C = 100 °C  
- 6.5  
- 4.0  
- 26  
Continuous Drain Current  
VGS at - 10 V  
ID  
T
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.59  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Avalanche Currenta  
0.025  
500  
EAS  
IAR  
mJ  
A
- 6.4  
7.4  
Repetiitive Avalanche Energya  
EAR  
mJ  
Maximum Power Dissipation  
T
C = 25 °C  
74  
PD  
W
V/ns  
°C  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
TA = 25 °C  
3.0  
dV/dt  
- 5.0  
- 55 to + 150  
300d  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = - 50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = - 6.5 A (see fig. 12).  
c. ISD - 6.5 A, dI/dt 120 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91085  
S11-1051-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...9

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