5秒后页面跳转
捷配首页

Datasheet > SIHF9620S-E3
SIHF9620S-E3 PDF预览

SIHF9620S-E3

更新时间： 2024-11-24 15:51:15
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲晶体管
页数 文件大小 规格书
9页 194K
描述
TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

阅读下载

中文翻译

获取价格

SIHF9620S-E3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：D2PAK
包装说明：SMALL OUTLINE, R-PSSO-G2针数：4
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.09配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：200 V最大漏极电流 (Abs) (ID)：3.5 A
最大漏极电流 (ID)：3.5 A最大漏源导通电阻：1.5 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：3 W最大脉冲漏极电流 (IDM)：14 A
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Matte Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SIHF9620S-E3 数据手册

 浏览型号SIHF9620S-E3的Datasheet PDF文件第2页浏览型号SIHF9620S-E3的Datasheet PDF文件第3页浏览型号SIHF9620S-E3的Datasheet PDF文件第4页浏览型号SIHF9620S-E3的Datasheet PDF文件第5页浏览型号SIHF9620S-E3的Datasheet PDF文件第6页浏览型号SIHF9620S-E3的Datasheet PDF文件第7页 
IRF9620S, SiHF9620S  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Halogen-free According to IEC 61249-2-21  
Definition  
- 200  
• Surface Mount  
RDS(on) ()  
VGS = - 10 V  
1.5  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
• P-Channel  
• Fast Switching  
• Ease of Paralleling  
• Simple Drive Requirements  
• Compliant to RoHS Directive 2002/95/EC  
Qg (Max.) (nC)  
22  
12  
10  
Q
Q
gs (nC)  
gd (nC)  
Configuration  
Single  
S
DESCRIPTION  
The Power MOSFETs technology is the key to Vishay’s  
advanced line of Power MOSFET transistors. The efficient  
geometry and unique processing of the Power MOSFETs  
design achieve very low on-state resistance combined with  
high transconductance and extreme device ruggedness.  
The D2PAK (TO-263) is a surface mount power package  
capable of accommodating die sizes up to HEX-4. It  
provides the highest power capability and the lowest  
possible on-resistance in any existing surface mount  
package. The D2PAK (TO-263) is suitable for high current  
applications because of its low internal connection  
resistance and can dissipate up to 2.0 W in a typical surface  
mount application.  
D2PAK (TO-263)  
G
D
G
D
P-Channel MOSFET  
S
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
D2PAK (TO-263)  
Lead (Pb)-free and Halogen-free  
SiHF9620S-GE3  
IRF9620SPbF  
SiHF9620S-E3  
SiHF9620STRL-GE3a  
IRF9620STRLPbFa  
SiHF9620STL-E3a  
Lead (Pb)-free  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
- 200  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25 °C  
C = 100 °C  
- 3.5  
Continuous Drain Current  
V
GS at - 10 V  
ID  
T
- 2.0  
A
Pulsed Drain Currenta  
IDM  
- 14  
Linear Derating Factor  
Linear Derating Factor (PCB Mount)e  
0.32  
W/°C  
A
0.025  
- 14  
Inductive Current, Clamp  
ILM  
PD  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
T
C = 25 °C  
40  
W
TA = 25 °C  
3.0  
dV/dt  
- 5.0  
V/ns  
°C  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).  
b. Not Applicable  
c. ISD - 3.5 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1” square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91083  
S11-1051-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...9

中文翻译

下载PDF

与SIHF9620S-E3相关器件

型号 品牌 获取价格 描述 数据表
SIHF9620S-GE3 VISHAY

获取价格

 		TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND
SIHF9620STL VISHAY

获取价格

 		TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3,
SIHF9620STL-E3 VISHAY

获取价格

 		TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT,
SIHF9620STRL-GE3 VISHAY

获取价格

 		TRANSISTOR 3.5 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND
SIHF9630 VISHAY

获取价格

 		Power MOSFET
SIHF9630 KERSEMI

获取价格

 		Power MOSFET
SIHF9630-E3 KERSEMI

获取价格

 		Power MOSFET
SIHF9630-E3 VISHAY

获取价格

 		Power MOSFET
SIHF9630S VISHAY

获取价格

 		暂无描述
SIHF9630S-GE3 VISHAY

获取价格

 		TRANSISTOR 6.5 A, 200 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND

与SIHF9620S-E3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证