IRF9620S, SiHF9620S
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
- 200
• Surface Mount
RDS(on) ()
VGS = - 10 V
1.5
• Available in Tape and Reel
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
Qg (Max.) (nC)
22
12
10
Q
Q
gs (nC)
gd (nC)
Configuration
Single
S
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
provides the highest power capability and the lowest
possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
D2PAK (TO-263)
G
D
G
D
P-Channel MOSFET
S
ORDERING INFORMATION
Package
D2PAK (TO-263)
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF9620S-GE3
IRF9620SPbF
SiHF9620S-E3
SiHF9620STRL-GE3a
IRF9620STRLPbFa
SiHF9620STL-E3a
Lead (Pb)-free
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
- 200
20
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
TC = 25 °C
C = 100 °C
- 3.5
Continuous Drain Current
V
GS at - 10 V
ID
T
- 2.0
A
Pulsed Drain Currenta
IDM
- 14
Linear Derating Factor
Linear Derating Factor (PCB Mount)e
0.32
W/°C
A
0.025
- 14
Inductive Current, Clamp
ILM
PD
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
T
C = 25 °C
40
W
TA = 25 °C
3.0
dV/dt
- 5.0
V/ns
°C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to + 150
300d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not Applicable
c. ISD - 3.5 A, dI/dt 95 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1” square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91083
S11-1051-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000