Datasheet > SiHA22N60E

SiHA22N60E

更新时间： 2024-11-07 14:52:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	182K
描述
E Series Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHA22N60E 数据手册

SiHA22N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

Thin-Lead TO-220 FULLPAK

• Low figure-of-merit (FOM) R_onx Q_g

• Low input capacitance (C_iss

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

Available

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

0.18

- High-Intensity discharge (HID)

- Fluorescent ballast lighting

• Consumer

R_DS(on)max (). at 25 °C

V_GS= 10 V

Q_gmax. (nC)

_gs(nC)

_gd(nC)

- Adaptors

Configuration

Single

- Televisions

- Game console

• Computing

- Adaptors

- ATX power supply

ORDERING INFORMATION

Package

Thin-Lead TO-220 FULLPAK

SiHA22N60E-E3

Lead (Pb)-free

Lead (Pb)-free and halogen-free

SiHA22N60E-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

600

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C) ^e

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

0.28

367

W/°C

Single pulse avalanche energy ^b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

E_AS

P_D

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

dV/dt

V/ns

Reverse diode dV/dt ^d

Soldering recommendations (peak temperature) ^c

for 10 s

300

°C

Mounting torque

M3 screw

0.6

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 5.1 A

c. 1.6 mm from case

d. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C

e. Limited by maximum junction temperature

S21-0919-Rev. H, 06-Sep-2021

Document Number: 91573

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与SiHA22N60E相关器件

型号	品牌	获取价格	描述	数据表
SiHA22N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHA22N60EL	VISHAY	获取价格	EL Series Power MOSFET
SiHA240N60E	VISHAY	获取价格	E Series Power MOSFET
SiHA24N65EF	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode
SiHA24N80AE	VISHAY	获取价格	E Series Power MOSFET
SiHA25N50E	VISHAY	获取价格	E Series Power MOSFET
SiHA25N60EFL	VISHAY	获取价格	E Series Power MOSFET with Fast Body Diode and Low Gate Charge
SiHA2N80E	VISHAY	获取价格	E Series Power MOSFET
SiHA4N80E	VISHAY	获取价格	E Series Power MOSFET
SiHA5N80AE	VISHAY	获取价格	E Series Power MOSFET