Datasheet > SiHA25N50E

SiHA25N50E

更新时间： 2024-11-25 14:54:39

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威世 - VISHAY		/
页数	文件大小	规格书
8页	158K
描述
E Series Power MOSFET

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SiHA25N50E 数据手册

SiHA25N50E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

Thin-Lead TO-220 FULLPAK

• Low figure-of-merit (FOM): R_onx Q_g

• Low input capacitance (C_iss

)

• Reduced switching and conduction losses

• Low gate charge (Q_g)

Available

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATONS

• Hard switched topologies

• Power factor correction power supplies (PFC)

• Switch mode power supplies (SMPS)

• Computing

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

550

R_DS(on)max. () at 25 °C

V_GS= 10 V

0.145

Q_gmax. (nC)

_gs(nC)

_gd(nC)

- PC silver box / ATX power supplies

• Lighting

Configuration

Single

- Two stage LED lighting

ORDERING INFORMATION

Package

Thin-Lead TO-220 FULLPAK

SiHA25N50E-E3

Lead (Pb)-free

Lead (Pb)-free and halogen-free

SiHA25N50E-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

500

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C) ^e

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

0.2

W/°C

Single pulse avalanche energy ^b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

E_AS

P_D

273

T_J, T_stg

-55 to +150

°C

_DS= 0 V to 80 % V_DS

dV/dt

V/ns

Reverse diode dV/dt ^d

Soldering recommendations (peak temperature) ^c

for 10 s

300

0.6

°C

Mounting torque

M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 4.4 A

c. 1.6 mm from case

d. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C

e. Limited by maximum junction temperature

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

TYP.

MAX.

UNIT

°C/W

Maximum junction-to-ambient

Maximum junction-to-case (drain)

R_thJC

3.6

S17-1308-Rev. E, 21-Aug-17

Document Number: 91628

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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