Datasheet > SiHB10N40D

SiHB10N40D

更新时间： 2024-11-06 14:52:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	152K
描述
D Series Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHB10N40D 数据手册

SiHB10N40D

Vishay Siliconix

www.vishay.com

D Series Power MOSFET

FEATURES

• Optimal design

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

_DS(on)max. () at 25 °C

Q_gmax. (nC)

450

- Low area specific on-resistance

- Low input capacitance (C_iss

V_GS= 10 V

0.6

)

- Reduced capacitive switching losses

- High body diode ruggedness

- Avalanche energy rated (UIS)

• Optimal efficiency and operation

- Low cost

_gs(nC)

_gd(nC)

Configuration

Single

D²PAK (TO-263)

- Simple gate drive circuitry

- Low figure-of-merit (FOM): R_onx Q_g

- Fast switching

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Consumer electronics

- Displays (LCD or plasma TV)

• Server and telecom power supplies

N-Channel MOSFET

- SMPS

• Industrial

- Welding

- Induction heating

- Motor drives

• Battery chargers

ORDERING INFORMATION

Package

D²PAK (TO-263)

Lead (Pb)-free and Halogen-free

SiHB10N40D-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

Gate-Source Voltage AC (f > 1 Hz)

V_DS

400

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy ^b

1.2

W/°C

E_AS

P_D

194

Maximum Power Dissipation

147

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^d

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

for 10 s

dV/dt

V/ns

°C

0.6

Soldering Recommendations (Peak temperature) ^c

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 2.3 mH, R_g= 25 , I_AS= 13 A.

c. 1.6 mm from case.

d. I_SD I_D, starting T_J= 25 °C.

S16-0799-Rev. B, 02-May-16

Document Number: 91530

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

中文翻译

下载PDF

与SiHB10N40D相关器件

型号	品牌	获取价格	描述	数据表
SIHB10N40D-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Meta
SiHB11N80AE	VISHAY	获取价格	E Series Power MOSFET
SIHB11N80AE-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SiHB11N80E	VISHAY	获取价格	E Series Power MOSFET
SiHB120N60E	VISHAY	获取价格	E Series Power MOSFET
SiHB125N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SIHB125N60EF-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SiHB125N65E	VISHAY	获取价格	E Series Power MOSFET
SIHB12N50C	VISHAY	获取价格	TRANSISTOR 12 A, 500 V, 0.555 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN,
SIHB12N50C-E3	VISHAY	获取价格	100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC