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SiHB11N80E PDF预览

SiHB11N80E

更新时间: 2024-11-25 14:53:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 131K
描述
E Series Power MOSFET

SiHB11N80E 数据手册

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SiHB11N80E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
D
• Low figure-of-merit (FOM) Ron x Qg  
• Low input capacitance (Ciss  
D2PAK (TO-263)  
)
• Reduced switching and conduction losses  
• Ultra low gate charge (Qg)  
G
• Avalanche energy rated (UIS)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
D
G
S
S
N-Channel MOSFET  
APPLICATIONS  
• Server and telecom power supplies  
• Switch mode power supplies (SMPS)  
• Power factor correction power supplies (PFC)  
• Lighting  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
850  
RDS(on) typ. () at 25 °C  
VGS = 10 V  
0.38  
- High-intensity discharge (HID)  
- Fluorescent ballast lighting  
• Industrial  
Qg max. (nC)  
88  
9
Qgs (nC)  
gd (nC)  
Q
16  
- Welding  
Configuration  
Single  
- Induction heating  
- Motor drives  
- Battery chargers  
- Renewable energy  
- Solar (PV inverters)  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
Lead (Pb)-free and halogen-free  
SiHB11N80E-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
800  
V
VGS  
30  
T
C = 25 °C  
12  
Continuous drain current (TJ = 150 °C)  
VGS at 10 V  
ID  
TC = 100 °C  
8
32  
A
Pulsed drain current a  
IDM  
Linear derating factor  
Single pulse avalanche energy b  
1.4  
W/°C  
mJ  
W
EAS  
PD  
226  
Maximum power dissipation  
179  
Operating junction and storage temperature range  
Drain-source voltage slope  
Reverse diode dV/dt d  
TJ, Tstg  
-55 to +150  
70  
°C  
TJ = 125 °C  
For 10 s  
dV/dt  
V/ns  
°C  
4.3  
Soldering recommendations (peak temperature) c  
300  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature  
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 4.0 A  
c. 1.6 mm from case  
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C  
S17-1724-Rev. A, 20-Nov-17  
Document Number: 92030  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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