Datasheet > SiHB20N50E

SiHB20N50E

更新时间： 2024-09-14 14:52:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	203K
描述
E Series Power MOSFET

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SiHB20N50E 数据手册

SiHB20N50E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) R_onx Q_g

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C (Ω)

Q_gmax. (nC)

550

• Low input capacitance (C_iss

)

V_GS= 10 V

0.184

• Reduced switching and conduction losses

• Low gate charge (Q_g)

_gs(nC)

_gd(nC)

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Configuration

Single

APPLICATIONS

• Computing

D²PAK (TO-263)

- PC silver box / ATX power supplies

• Lighting

- Two stage LED lighting

• Consumer electronics

• Applications using hard switched topologies

- Power factor correction (PFC)

- Two switch forward converter

- Flyback converter

N-Channel MOSFET

• Switch mode power supplies (SMPS)

ORDERING INFORMATION

Package

D²PAK (TO-263)

Lead (Pb)-free and Halogen-free

SiHB20N50E-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy ^b

1.4

W/°C

E_AS

P_D

204

Maximum Power Dissipation

179

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt ^d

T_J, T_stg

-55 to +150

°C

_DS= 0 V to 80 % V_DS

dV/dt

V/ns

°C

Soldering Recommendations (Peak Temperature) ^c

for 10 s

300

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 Ω, I_AS= 3.8 A.

c. 1.6 mm from case.

d. I_SD≤ I_D, dI/dt = 100 A/μs, starting T_J= 25 °C.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

R_thJA

°C/W

R_thJC

0.7

S15-0278-Rev. B, 23-Feb-15

Document Number: 91634

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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