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SiHB125N65E PDF预览

SiHB125N65E

更新时间: 2024-11-07 17:02:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 184K
描述
E Series Power MOSFET

SiHB125N65E 数据手册

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SiHB125N65E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
D
• 4th generation E series technology  
• Low figure-of-merit (FOM) Ron x Qg  
• Low effective capacitance (Co(er)  
D2PAK (TO-263)  
)
• Reduced switching and conduction losses  
• Avalanche energy rated (UIS)  
G
D
• Kelvin connection for reduced gate noise  
G
S
S
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
N-Channel MOSFET  
APPLICATIONS  
• Server and telecom power supplies  
• Switch mode power supplies (SMPS)  
• Power factor correction power supplies (PFC)  
• Lighting  
- High-intensity discharge (HID)  
- Fluorescent ballast lighting  
• Industrial  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
700  
RDS(on) typ. () at 25 °C  
VGS = 10 V  
0.106  
Qg max. (nC)  
57  
15  
Q
gs (nC)  
gd (nC)  
Q
14  
Configuration  
Single  
- Welding  
- Induction heating  
- Motor drives  
- Battery chargers  
- Solar (PV inverters)  
ORDERING INFORMATION  
Package  
D2PAK (TO-263)  
Lead (Pb)-free and halogen-free  
SiHB125N65E-T1-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
650  
V
VGS  
30  
27  
T
C = 25 °C  
Continuous drain current (TJ = 150 °C)  
VGS at 10 V  
ID  
TC = 100 °C  
17  
A
Pulsed drain current a  
IDM  
60  
Linear derating factor  
1.67  
81  
W/°C  
mJ  
W
Single pulse avalanche energy b  
Maximum power dissipation  
Operating junction and storage temperature range  
Drain-source voltage slope  
Reverse diode dv/dt c  
EAS  
PD  
208  
TJ, Tstg  
-55 to +150  
100  
°C  
dv/dt  
V/ns  
7.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature  
b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 2.4 A  
c. ISD ID, di/dt = 100 A/μs, starting TJ = 25 °C  
S24-0070-Rev. A, 29-Jan-2024  
Document Number: 92530  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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