Datasheet > SiHB11N80AE

SiHB11N80AE

更新时间： 2024-11-25 14:53:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	196K
描述
E Series Power MOSFET

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SiHB11N80AE 数据手册

SiHB11N80AE

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• Low figure-of-merit (FOM) R_onx Q_g

• Low effective capacitance (C_iss

D²PAK (TO-263)

)

• Reduced switching and conduction losses

• Ultra low gate charge (Q_g)

• Avalanche energy rated (UIS)

• Integrated Zener diode ESD protection

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

850

R_DS(on)typ. () at 25 °C

V_GS= 10 V

0.391

Q_gmax. (nC)

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

_gs(nC)

_gd(nC)

Configuration

Single

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Renewable energy

ORDERING INFORMATION

Package

D²PAK (TO-263)

SIHB11N80AE-GE3

SIHB11N80AE-T1-GE3

SIHB11N80AE-T5-GE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

800

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

Single pulse avalanche energy ^b

0.6

W/°C

E_AS

P_D

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dV/dt ^d

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

For 10 s

dV/dt

V/ns

°C

Soldering recommendations (peak temperature) ^c

260

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 2.5 A

c. 1.6 mm from case

d. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C

S22-0286-Rev. B, 28-Mar-2022

Document Number: 92336

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiHB11N80AE相关器件

型号	品牌	获取价格	描述	数据表
SIHB11N80AE-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SiHB11N80E	VISHAY	获取价格	E Series Power MOSFET
SiHB120N60E	VISHAY	获取价格	E Series Power MOSFET
SiHB125N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SIHB125N60EF-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SiHB125N65E	VISHAY	获取价格	E Series Power MOSFET
SIHB12N50C	VISHAY	获取价格	TRANSISTOR 12 A, 500 V, 0.555 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, 3 PIN,
SIHB12N50C-E3	VISHAY	获取价格	100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC
SiHB12N50E	VISHAY	获取价格	E Series Power MOSFET
SIHB12N50E-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, M

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