Datasheet > SiHB055N60EF

SiHB055N60EF

更新时间： 2024-11-07 14:52:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	191K
描述
EF Series Power MOSFET With Fast Body Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHB055N60EF 数据手册

SiHB055N60EF

www.vishay.com

Vishay Siliconix

EF Series Power MOSFET With Fast Body Diode

FEATURES

• 4^thgeneration E series technology

D²PAK (TO-263)

• Low figure-of-merit (FOM) R_onx Q_g

• Low effective capacitance (C_o(er)

)

• Reduced switching and conduction losses

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

R_DS(on)typ. (Ω) at 25 °C

V_GS= 10 V

0.048

Q_gmax. (nC)

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

_gs(nC)

_gd(nC)

Configuration

Single

- Welding

- Motor drives

- Battery chargers

- Solar (PV inverters)

ORDERING INFORMATION

Package

D²PAK (TO-263)

Lead (Pb)-free and halogen-free

SIHB055N60EF-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

123

Linear derating factor

Single pulse avalanche energy ^b

2.2

W/°C

E_AS

P_D

286

Maximum power dissipation

278

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dV/dt ^d

T_J, T_stg

-55 to +150

100

°C

T_J= 125 °C

For 10 s

dV/dt

V/ns

°C

150

Soldering recommendations (peak temperature) ^c

260

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 120 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 Ω, I_AS= 4.5 A

c. 1.6 mm from case

d. I_SD≤ I_D, dI/dt = 390 A/μs, starting T_J= 25 °C

S21-1035-Rev. A, 25-Oct-2021

Document Number: 92420

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与SiHB055N60EF相关器件

型号	品牌	获取价格	描述	数据表
SiHB065N60E	VISHAY	获取价格	E Series Power MOSFET
SiHB068N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHB080N60E	VISHAY	获取价格	E Series Power MOSFET
SiHB085N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHB100N60E	VISHAY	获取价格	E Series Power MOSFET
SiHB100N65E	VISHAY	获取价格	E Series Power MOSFET
SiHB105N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHB10N40D	VISHAY	获取价格	D Series Power MOSFET
SIHB10N40D-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Meta
SiHB11N80AE	VISHAY	获取价格	E Series Power MOSFET