Datasheet > SiHB100N60E

SiHB100N60E

更新时间： 2024-09-17 14:53:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	193K
描述
E Series Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiHB100N60E 数据手册

SiHB100N60E

Vishay Siliconix

www.vishay.com

E Series Power MOSFET

FEATURES

• 4^thgeneration E series technology

• Low figure-of-merit (FOM) R_onx Q_g

• Low effective capacitance (C_o(er)

D²PAK (TO-263)

)

• Reduced switching and conduction losses

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Server and telecom power supplies

• Switch mode power supplies (SMPS)

• Power factor correction power supplies (PFC)

• Lighting

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

650

R_DS(on)typ. (Ω) at 25 °C

V_GS= 10 V

0.086

Q_gmax. (nC)

- High-intensity discharge (HID)

- Fluorescent ballast lighting

• Industrial

_gs(nC)

_gd(nC)

Configuration

Single

- Welding

- Induction heating

- Motor drives

- Battery chargers

- Solar (PV inverters)

ORDERING INFORMATION

Package

D²PAK (TO-263)

Lead (Pb)-free and halogen-free

SiHB100N60E-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

600

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

Single pulse avalanche energy ^b

1.67

226

W/°C

E_AS

P_D

Maximum power dissipation

208

Operating junction and storage temperature range

Drain-source voltage slope

Reverse diode dv/dt ^d

T_J, T_stg

-55 to +150

100

°C

T_J= 125 °C

For 10 s

dv/dt

V/ns

°C

Soldering recommendations (peak temperature) ^c

260

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 120 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 Ω, I_AS= 4.0 A

c. 1.6 mm from case

d. I_SD≤ I_D, di/dt = 100 A/μs, starting T_J= 25 °C

S20-0140-Rev. B, 16-Mar-2020

Document Number: 92143

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

中文翻译

下载PDF

与SiHB100N60E相关器件

型号	品牌	获取价格	描述	数据表
SiHB100N65E	VISHAY	获取价格	E Series Power MOSFET
SiHB105N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SiHB10N40D	VISHAY	获取价格	D Series Power MOSFET
SIHB10N40D-GE3	VISHAY	获取价格	Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Meta
SiHB11N80AE	VISHAY	获取价格	E Series Power MOSFET
SIHB11N80AE-GE3	VISHAY	获取价格	Power Field-Effect Transistor,
SiHB11N80E	VISHAY	获取价格	E Series Power MOSFET
SiHB120N60E	VISHAY	获取价格	E Series Power MOSFET
SiHB125N60EF	VISHAY	获取价格	EF Series Power MOSFET With Fast Body Diode
SIHB125N60EF-GE3	VISHAY	获取价格	Power Field-Effect Transistor,