Datasheet > SiHA25N60EFL

SiHA25N60EFL

更新时间： 2024-11-07 14:53:43

品牌	Logo	应用领域
威世 - VISHAY		栅
页数	文件大小	规格书
8页	158K
描述
E Series Power MOSFET with Fast Body Diode and Low Gate Charge

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SiHA25N60EFL 数据手册

SiHA25N60EFL

www.vishay.com

Vishay Siliconix

E Series Power MOSFET with Fast Body Diode and

Low Gate Charge

FEATURES

• Reduced figure-of-merit (FOM): R_onx Q_g

Thin-Lead TO-220 FULLPAK

• Fast body diode MOSFET using E series

technology

• Reduced t_rr, Q_rr, and I_RRM

• Increased robustness due to low Q_rr

Available

• Low input capacitance (C_iss

)

• Reduced switching and conduction losses

• Avalanche energy rated (UIS)

N-Channel MOSFET

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRODUCT SUMMARY

APPLICATIONS

• Telecommunications

- Server and telecom power supplies

• Computing

- ATX power supplies

• Industrial

V_DS(V) at T_Jmax.

_DS(on)typ. () at 25 °C

Q_gmax. (nC)

650

V_GS= 10 V

0.127

_gs(nC)

_gd(nC)

- Welding

- Induction heating

Configuration

Single

- Battery chargers

- Uninterruptible power supplies (UPS)

• Renewable energy

- String PV inverters

ORDERING INFORMATION

Package

Thin-Lead TO-220 FULLPAK

SiHA25N60EFL-E3

Lead (Pb)-free

Lead (Pb)-free and halogen-free

SiHA25N60EFL-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

600

V_GS

_C= 25 °C

Continuous drain current (T_J= 150 °C) ^e

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

W/°C

Single pulse avalanche energy ^b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

E_AS

P_D

353

T_J, T_stg

-55 to +150

°C

_DS= 0 V to 80 % V_DS

dV/dt

V/ns

Reverse diode dV/dt ^d

Soldering recommendations (peak temperature) ^c

for 10 s

300

0.6

°C

Mounting torque

M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 140 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 , I_AS= 5 A

c. 1.6 mm from case

d. I_SD I_D, dI/dt = 100 A/μs, starting T_J= 25 °C

e. Limited by maximum junction

S17-1308-Rev. C, 21-Aug-17

Document Number: 91856

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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